铜铟硒太阳能电池材料的制备与表征及RTP的设计

【作者】 曹永胜；

【导师】 王德亮；

【作者基本信息】 中国科学技术大学 ， 凝聚态物理， 2009， 硕士

【摘要】 20世纪70年代全世界发生了以石油为代表的“能源危机”,这让人们认识到常规能源的局限性。随着石油、天然气等化石能源的迅速消耗,能源问题正受到人们广泛的关注。太阳能作为一种可再生的清洁能源具有其它能源无法比拟的优势,而利用太阳能光伏技术发电,已成为能源利用不可逆转的潮流。Cu（In,Ga）Se₂（CIGS）薄膜太阳能电池有非常高的理论转化效率（高达30%）,高的吸收系数（105量级）,稳定性好,对材料缺陷的容忍度高等优点成为了近年来电池研究的热点。本论文具体研究的内容和主要结论如下:（1）采用电沉积法制备铜铟硒（CuInSe₂）薄膜太阳能电池材料,并研究了镀液中不同元素比例对预制膜成分的影响。（2）用管式炉对预制膜进行硒化,研究了不同硒化条件对薄膜的影响,包括温度、预制膜中Cu/In比例和时间等。当预制膜中Cu/In比例接近1:1（稍微富铜）,在温度550℃、热处理时间30min的硒化条件下薄膜的结晶质量最好。（3）用拉曼光谱探测Cu-In-2Se预制膜在热处理过程中的晶相,由此推断薄膜形成过程。在没有高的饱和Se气氛的保护下,中间相Cu-Se,In-Se,Se和CuAu-CIS相等很容易在预制膜中形成,预制膜内的原子排列结构与CIS晶体相似。二元的硒化物通过与Cu,Se原子或离子之间的扩散转变为CIS。γ-CuSe和CIS的形成温度在170℃左右。（4）设计并组装了一个快速升温的设备RTP（Rapid Thermal Processing）。该设备的最高升温速率为25℃/s。更多还原

【Abstract】 In the 1970s the“Energy Crisis”occurred over the world, which took the petroleum as representative. It made people realize the limitation of“conventional energy”. As the fossil energy sources such as oil and natural gas being consumed rapidly, the problem of energy sources is being paid more and more attention by the world. Solar energy, which is a sort of reproducible clean energy, has a lot of advantages over other energy sources. The conversion of sunlight to electrical power is an irreversible trend in the field of energy utilization. Cu（In,Ga）Se₂（CIGS） has become a hot topic in solar cell field in recent years, which has very high theory conversion efficiency（as high as 30%）, very-high-absorption coefficient（105 magnitudes）, long-term stability and good tolerance for defects and impurity.The main contents and results in this paper are as following:（1） Copper Indium Diselenide（CIS） thin films were electrodeposited, and the influence of elements’proportion in the plating bath to the precursor’s composition was studied.（2） The precursors were selenized in the tube furnace, and the influence of different selenized factors to film’s quality was studied. The factors contained temperature, selenized time, and Cu/In proportion in the precursors. Good crystalline quality films were obtained under a selenized temperature of 550℃, the Cu/In proportion of 1:1 in the precursor, and the time of 30 minutes.（3） Using micro-Raman scattering spectrum to observe the phase formation in the precursor under different temperature during the annealing process. Without protection of a high Se vapor pressure, intermediate In-Se, Cu-Se, CuAu-ordered CIS and many other selenides were easily formed in the CIS film, which have atomic structures arranged in a way close to CIS. The formation temperature ofγ-CuSe is 170℃. Binary selenides（In-Se and Cu-Se） were transformed to the CIS by interdiffusion and reaction of the mobile Cu and Se atoms/ions under high Se vapor pressure.（4） Design and assemble a furnace of Rapid Thermal Processing（RTP）. The furnace’s highest heating rate is 25℃/s.更多还原