PZT-NiCuZn铁氧体复合双性材料电磁性能研究

【作者】 陈世钗；

【导师】 贾利军；

【作者基本信息】 电子科技大学 ， 材料物理与化学， 2009， 硕士

【摘要】 信息化社会的不断发展推动着电子元器件向小型化、轻量化、多功能和高稳定方向发展。因而将各种材料的特殊功能进行复合,在一种元件中实现多种功能已经成为市场的迫切需求,这就使得功能复合材料的研究成为了一个重要方向和热点。目前在制作多功能元器件时多采用低温共烧陶瓷LTCC （ Low Temperature Co-fired Ceramic）技术,但不同介质层间存在着致密化速率、烧成收缩率等方面的失配,制约着共烧技术的工业化进程。本文正是针对上述问题,以基于LTCC工艺的PZT-NiCuZn铁氧体复合双性材料为主要研究对象,在深入分析了复合机理、掺杂改性和低温烧结机制的基础上,对材料和工艺做了探索性和创新性的研究,使其有望成为用于制作叠层片式滤波器的电感、电容复合双性材料。主要内容为:1.研究工艺条件对低温烧结NiCuZn铁氧体材料电磁性能的影响。按照工艺流程改变工艺参数预烧温度、烧结温度,并考察不同含量的助溶剂Bi₂O₃对NiCuZn铁氧体材料电磁性能的影响。利用扫描电镜SEM等分析手段了解改变工艺参数对铁氧体材料微观结构的影响规律,通过对材料介电常数频谱、磁导率频谱及品质因数的测量得到工艺参数对材料电磁性能的影响规律。根据实验数据结果得到最佳铁氧体烧结工艺.2.研究低温烧结NiCuZn铁氧体的组成对复合双性材料微观结构和电磁性能的影响,从而确定比较合适的NiCuZn铁氧体组成。将铁电性的PZT与选定的铁磁性的NiCuZn铁氧体复合成具有电感、电容双性的铁电-铁磁复合双性材料,考察铁电-铁磁组分关系对复合双性材料的微观显微结构的影响,并对其电磁性能进行了深入地分析研究。3.研究不同掺杂剂对低温共烧复合双性材料的改性机制。研究不同含量的助熔剂Bi₂O₃对其烧结特性、微观结构及电磁性能的影响;研究Co₂O₃- Bi₂O₃复合掺杂对复合双性材料微观结构及电磁性能的影响,即在固定Bi₂O₃的前提下,对复合双性材料进行不同含量的Co³⁺离子掺杂,考察其对材料性能的影响。4.研究不同制备工艺方式对低温共烧复合双性材料的性能影响。采用软化学法中的溶胶-凝胶法合成复合双性材料,并与前面几章所采用的固相反应法制作的复合双性材料进行性能对比研究,考察分析制备工艺方式对复合双性材料微观结构和电磁性能等的影响。5.采用本文研制的低温烧结PZT-NiCuZn铁氧体复合双性材料为基板材料,制备多层片式电感、电容、抗EMI低通滤波器,利用ADS软件和HFSS软件对低通滤波器进行电路仿真和三维结构仿真,最终设计出如下两个封装尺寸均为0805型（2.0mm×1.25mm×0.8mm）的低通滤波器:截止频率为10MHz,带内纹波小于0.5dB,在40MHz处衰减大于40dB的LTCC低通滤波器和截止频率为50MHz,带内纹波小于0.5dB,在100MHz处衰减大于20dB的LTCC低通滤波器。更多还原

【Abstract】 The continuous development of information society promotes the electronic components to the direction of small size, light weight, multi-functional and high stability. Thus put a variety of materials to carry out the special features composite, the component having a variety of functions has become the urgent needs of the market, it is become an important direction and hot spots to make the study of functional composite materials. At the present, the productions of many multi-functional components use LTCC （Low Temperature Co-fired Ceramic） technology. However, different dielectric layers rate mismatch between the densification rate, sintering shrinkage and thermal expansion, which restricts the industrialization process of cofired technology.In this thesis, the composite mechanism and the basic mechanisms of modification and low-temperature sintering of PZT-NiCuZn ceramic-ferrite composite materials have been analyzed. Then a series of novel materials and its preparation are explored and investigated. It is expected to become inductors, capacitors dual-performance materials. The main results are as follows:1. The effects of preparation process were researched on the microstructure and electromagnetic properties of ceramics. The pre-sintering temperature, sintering temperature are changed regularly to investigate the variation of the phase formation by X-ray diffraction studies, the micrographs of the sintered ceramics by SEM, and the bulk density by Archimedes method. The frequency dependence of complex permeability, quality factor, and dielectric constant are studied.2. With the systemically analyses of the synthesis of ferroelectric-ferromagnetic composite materials, the low temperature sintered NiCuZn ferrites and perovskite PZT was chosen as the main components. The ferroelectric-ferromagnetic composite material is synthesized by usual ceramic technology with NiCuZn ferrites and perovskite PZT as the main components. The microstructure and electromagnetic properties of the composite with different composition of NiCuZn ferrites and different perovskite contents are investigated. 3. Bi₂O₃ doped low temperature sintered PZT-NiCuZn ceramic-ferrite composite materials were also investigated in the aspects of the microstructure and magnetic properties. On the basis of Bi₂O₃ doping in a fixed amount, the effects of Co₂O₃-Bi₂O₃ co-additive on the microstructure and electromagnetic properties of low temperature sintering composite materials were investigated.4. Preparation of different methods of low temperature co-fired double-composite material performance was investigated. The effects of microstructure and electromagnetic properties also were study analysis by different style of preparations.5. The prepared PZT-NiCuZn composite materials were chosen to design the multilayer chip inductor、capacitance and anti-EMI filter. The ADS and HFSS software simulated circuit diagram and three-dimensional structure diagram of low pass filter. Through simulating and revising the model repeatedly, finally design the follow two low pass filters which packages are 0805 type size （2.0mm×1.3mm×0.8mm）: A low pass filter was set up with cut off frequency is 10MHz, ripple within the passband below 0.5dB, attenuation exceed 40dB at 40MHz, another low pass filter was set up with cut off frequency is 50MHz, ripple within the passband below 0.5dB, attenuation exceed 20dB at 100MHz更多还原