【作者】 张兰君；

【导师】 徐静平；

【作者基本信息】 华中科技大学 ， 微电子学与固体电子学， 2007， 硕士

【摘要】 随着互补金属氧化物半导体(CMOS)器件特征尺寸的不断缩小,Si基MOS器件的发展达到了其物理极限,新的沟道材料应变SiGe由于其具有空穴迁移率高,温度范围宽,热传导性良好和漏电流低等特点,成为了制造超小尺寸、高集成度、高频、低噪声集成电路的理想半导体材料。最近几年,高k栅介质Ge和SiGe MOSFETs的研究是微电子学领域的热点,主要集中于高k栅介质的制备工艺及其电特性研究。本文研究了SiGe MOSFET的迁移率。在器件物理的基础上,考虑了应变对SiGe合金能带结构参数的影响,建立了一个半经验的Si1-xGex pMOSFET反型沟道空穴迁移率模型。该模型重点讨论了反型电荷对离化杂质散射的屏蔽作用,由此对等效体晶格散射迁移率进行了修正。并且详细讨论了等效体晶格散射迁移率随掺杂浓度Nd和Ge组分x的变化。利用该模型,对影响空穴迁移率的主要因素进行了分析讨论。本文介绍了高k栅介质Ge MOS电容样品的制备,并进行了测试。比较了湿N2退火和干N2退火对HfTiON栅介质Ge MOS电容界面特性的影响,分析了Ti浓度对HfTiO栅介质Ge MOS电容样品电特性的影响。比较了HfO2、HfTiON和HfTiO栅介质Ge MOS电容样品电特性的差异,以及各自的优缺点和应用前景。此外,本文还研究了高频C-V测试仪的数据采集及处理,完成了数据采集界面程序的编写。利用Protel DXP完成了测试仪印制电路板的设计。更多还原

【Abstract】 As the continual scaling of complementary metal-oxide-semiconductor （CMOS）, Si MOS device approaches its fundamental limits, and new channel materials the strained SiGe material possesses such qualities as: high hole mobility, wide range of suffering temperature, good heat conductibility and low leakage current etc, which enable it to become an ideal material used for the production of ultra-small-scale, highly-integrated circuits which own high frequency and low noisy. Recently, study on SiGe or Ge MOSFETs with high-κgate dielectric have become hot point, which mainly be focused on fabrication processes and electrical properties of high-κgate dielectric.The mobility of SiGe MOSFET was studied in this essay. Considering the strain-effect on Si1-xGe according to device physics, a low-filed hole mobility model is founded. The model is fitted as the function of components of Ge ini_1-xGe_x alloy, in which the coulomb scattering of the trapped charges and ionized doping is revised because of the different screen-effect that mobile carriers play on them. By the model, the variation of hole mobility with strain is simulated and the influences of some parameters on mobility are analyzed and discussed for device-optimizing. In this work, the samples of High-k Gate Dielectric SiGe MOS device are made and tested. The influences to the interface properties of the Ge MOS capacitance with HfTiON Gate Dielectric generated by the wet N2 PDA and dry N2 PDA are compared as followed. How the Ti concentration influence on the electricity properties of HfTiO Gate Dielectric Ge MOSFET are discussed also. The different electrical properties of the different Ge MOS capacitance samples with different gate dielectric of HfO2 ,HfTiON and HfTiO are compared, the merits of each kind materials and application foreground are also discussed. Further more, the data collection and processing of the high frequency C-V measuring device are studied. The programming of data collection interface is complished . Meanwhile, this article has accomplished the PCB designing of the high frequency C-V measuring device with the help of soft Protel DXP.更多还原