【作者】 章晨静；

【导师】 陈庭金； 刘祖明；

【作者基本信息】 云南师范大学 ， 农业生物环境与能源工程， 2002， 硕士

【摘要】 本文介绍以Si和SnO₂／Glass两种材料为衬底，采用热壁外延的方法得到结构良好的，适合作GaAs太阳电池的GaAs多晶薄膜。采用电子探针（EPMA）测定薄膜的组份，表面与剖面形貌，X射线衍射（XRD）分析生长薄膜的结构，Raman散射（RSS）、光致发光光谱（PL）分析其光学性质，并且测定了薄膜的导电类型和方块电阻两个基本的电学参数。结构表明该薄膜性能良好，表面呈绒面结构，晶粒为柱状结构，适合制作GaAs薄膜太阳电池。全面分析了现有制备工艺条件对GaAs薄膜性能的影响，得出最佳的生长条件。 SnO₂／Glass：源温为930℃，衬底温度为500℃，生长时间4小时 Si：源温为900℃，衬底温度为700℃，生长时间3小时更多还原

【Abstract】 GaAs polycrytalline thin films with good performance were prepared on conducting glass and Si by hot wall epitaxy (HWE) , which were suitable for solar cell . Electron probe micro-analyzer (EPMA)was applied for the component , surface and cross-section mrophology of grown films , and X-ray diffraction (XRD) for their structure ; Raman scattering spectrum(RSS) and photoluminescene(PL) were used for evaluating their optical characteristics . We also study electrical characteristics of films. The results are shown that , there is textured surface and columnar grain of grown GaAs polycrystalline thin films , which are greatly promising to become the candidate of solar cell with low cost and high efficiency. Meanwhile, by analyzing the effect of procedure on films feature all-sidely , it was obtained , that is source temperature should be 930℃, substrate temperature should be 500℃ for conducting glass and source temperature should be 900 ℃ , substrate temperature should be 700℃ for Si.更多还原