AIP脉冲偏压电源及等离子体诊断系统的设计与应用研究

【作者】 隋振中；

【导师】 戚栋； 林国强；

【作者基本信息】 大连理工大学 ， 测试计量技术及仪器， 2003， 硕士

【摘要】 电弧离子镀以其离化率高沉积速度快、膜层致密、膜基结合力强、绕镀性好等优点，已发展成为世界范围的一项高新技术产业。为了扩大电弧离子镀的基材范围和用电弧离子镀设备制备出内应力较低的更厚镀层以及其它类型应用的高性能镀层，随着脉冲功率技术的发展，一种脉冲负偏压工艺开始用于电弧离子镀技术。但是由于目前国内用于电弧离子镀的脉冲负偏压电源比较少，并且表征脉冲电源特性的f和D参数大都固定，只有电压可调，为此开发一种各种参数灵活可调的脉冲电源显得尤为重要。另一方面，为了实时了解电弧等离子体反应器内的情况，给出等离子体的各种特性参数，开发一套自动化程度比较高的等离子体诊断系统也势在必行。本论文对这两方面的问题作了研究，主要完成了以下工作： 1．本论文提出了主电路部分先逆变后斩波，输出部分为四路IGBT相互串联叠加的设计方案，经过实际使用证明，该方案可以做到在一定范围内灵活调节偏压电源输出的各种参数。 2．运用高集成度高速度的单片机，高压高功率放大器，以及高速D／A、A／D转换电路，设计完成由输出幅度为±100V，输出频率在400Hz～20KHz范围内可调的智能等离子体诊断电源和基于ISA插槽的采样率为1MHz，精度为12位的双通道数据采集卡组成的诊断系统。 3．应用设计的电源和诊断系统，在俄产Bulat6型设备上进行试验。首次诊断出在正常镀膜条件下，电弧镀等离子体的电子温度，离子密度、等离子体空间电位。并相应的算出了等离子体鞘层厚度及由鞘层引起的电容。 经过对直流偏压和脉冲偏压两种工艺下合成的TiN薄膜的各项性能测试结果表明，脉冲偏压工艺下合成的薄膜品质优良，电源输出脉冲参数的调整和等离子体状态的诊断为工艺的稳定实施提供了很好的保障。设计达到了预定的设计目标。更多还原

【Abstract】 Arc ion plating (AIP) has played an important role in the synthesize solidness film on the mechanical processing tools, it is developing a high technology industry in the whole world because of its advantages such as high ionizing efficiency, fast deposition speed, good density of cladding material, better cementing property between film and backing material etc. In order to expand the kind of backing material and produce thick film (>50um) of low inner stress and other high performance film, a pulsed negative bias voltage technique is using in the AIP craft along with the developing of pulsed power technology. In our country, on the one hand, there are few pulsed negative bias voltage power supplies, on the other hand the characterization parameters such as duty cycle and frequency are fixed, only the output voltage is adjustable. So it is important to develop a pulsed negative bias voltage power supply whose characterization parameters are all adjustable. In order to monitor the inner of the Arc plasma reactor at real-time, and then present the characteristic parameter of Arc plasma online. It is necessary to develop an automatic plasma diagnostic system. In this paper, these two questions are studied and the following work is completed.1. This paper proposes a design option that main circuit part includes of inversion unit first and then the chopped wave unit, the output contacts the plan of design superposed each other for four routes of IGBT, by actually using proved that the scheme is possible to regulate various kinds of parameters within the specific limits flexible of the bias voltage power supply outputted actually.2. Using the high integrated level single-chip microcomputer at a high speed, the high power amplifier of high voltage, and D/A, A/D circuits at a high conversion rate, a intellectual plasma diagnose system is designed. The system includes a saw-tooth power supply which output voltage range is ?100 V, output frequency is adjustable from 400 Hz to 20 KHz, and a dual channel DAQ card on the basis of ISA slot with 1MHz sample rate and 12bit sample precision.3. To experiment on the Model Bulat6 equipment from Russia by using the designed power supply and diagnosis system, the numerical value of electronic temperature, density of ion and plasma space electric potential is diagnosed for the first time under the normal plating condition. And corresponding the thickness of sheath of plasma and the capacitance caused by the sheath are calculated.Through test of every performance of TiN films that result of direct current bias voltage and pulse bias voltage, this paper finds that the membrane formatted under the craft of bias voltage of the pulse is in best quality. The adjustment of pulsed power supply output and plasma diagnosis of state of parameter have offered kind guarantee for steady implementation of the craft. This design reachs the design object booked.更多还原