【作者】 叶光；

【导师】 郭太良；

【作者基本信息】 福州大学 ， 微电子学与固体电子学， 2003， 硕士

【摘要】 本文介绍了一种可用于场致发射显示的平面薄膜金属-绝缘-金属型电子发射结构的研制过程。利用薄膜的各种真空溅射沉积技术，在玻璃基片上按一定的工序沉积Cr/Cu-SiO2/Al2O3-Cr/Cu薄膜，并经过相应的丝网印刷、化学腐蚀等工艺，形成层状交叉的MIM结构。在制备Cr/Cu底电极时，分析了基片加热温度对薄膜表面形貌的影响。在介质层的制备中，主要分析了薄膜沉积速率与溅射气压及溅射功率的关系，并对中频反应溅射制备Al2O3膜的迟滞回线作了重点研究，同时介绍了Ta2O5膜的反应溅射制备。在MIM结构的性能测试上，主要测试了这种结构的I-V特性曲线，以及介质层的耐压性能。通过电子发射结构的改进，基本达到了降低电子场致发射电压的目的,并在显示样屏中已能实现对字符及视频图象的显示更多还原

【Abstract】 The development process of a new kind of electron emission structure is introduced in this paper. This electron emission structure is made up of metal-insulator-metal films, which can be used in field emission display, The Cr/Cu-SiO2/Al2O3-Cr/Cu films are ordinally grown on glass substance by ways of vacuum sputtering, and the MIM structure is formed through silk-screen prindt and chemical erode accordingly. During the Cr/Cu bottom electrode deposited, the effect of glass substance temperature on film micro-structure is analyzed. In the course of insulator film formed, the relations between the film growth rate and the sputtering pressure and power are discussed. The hysteresis loop appearing in reactive sputtering Al2O3 film is especially studied, and reactive sputtering Ta2O5 film is also mentioned. The I-V curve and the voltage-standing of this MIM structure are also obtained when measured its performance. The purpose to decrease the emission voltage is achieved by and large through this way of structure improvement, and the character and video frequency image can be display on the sample screen更多还原