【作者】 高琰；

【导师】 亢宝位；

【作者基本信息】 北京工业大学 ， 微电子学与固体电子学， 2002， 硕士

【摘要】 本文对一种具有新型耐压层结构的IGBT做了详细论述。新结构用三重扩散的方法在n~-单晶片上引入了n~+缓冲层，仍然保留了NPT-IGBT中薄而轻掺杂p层和高载流子寿命的本质优点，同时又具有PT-IGBT中n~-／(n~+)双层复合的薄耐压层(即薄基区)的优点。它不是现有的NPT型，也不是现有的PT型。命名为：低功耗IGBT(LOW POWER LOSS IGBT——LPL—IGBT)。仿真结果和实际的样管制造结果均证实了这种新结构IGBT的优越性。它的总损耗(通态损耗与开关损耗之和)低于现有NPT-IGBT，而其余性能(耐压、电流密度、安全工作区、抗过流、过压能力等)和制造成本与现有NPT-IGBT相同。它将IGBT的性能推向了一个新的水平，具有更大的应用潜力。在功率开关器件这个大家庭里，IGBT的地位将更加显赫。更多还原

【Abstract】 A new structure of IGBT has been discussed in detail in this thesis. In the new structure, a n+ buffer layer is introduced into the bulk silicon substrate with a triple-diffusion process..The new structure has two features :one is the feature of NPT-IGBT : the thin and lightly-doped p+ layer and the high lifetimes of the carriers; the other is the feature of PT-IGBT :n7n+structure which can make the n" region very thin . The new structure is neither the NPT-IGBT nor the PT-IGBT . We call it :LOWPOWER LOSS IGBT------LPL-IGBT . Experimenal results and simulationresults have shown that this new structure provides a better performance than that of the conventional NPT structure. Its power loss is lower than NPT-IGBT and other parameters are the same as those of NPT-IGBT. LPL-IGBT has reached a new level and has a bright futuer in the applications. It will have a prominent status in the family of power devices.更多还原