【作者】 贝亮亮；

【导师】 朱丽萍； 郑志东；

【作者基本信息】 浙江大学 ， 材料工程， 2012， 硕士

【摘要】 透明导电薄膜是一种把透明性和导电性相结合的功能薄膜材料,广泛应用于液晶显示器、太阳能电池、节能玻璃等光电领域。在这类材料中,ZnO透明导电薄膜不仅具有良好的光电性能,而且原材料丰富,价格便宜,无毒无污染,在氢等离子环境中稳定性好,是一种最有希望替代ITO的透明导电氧化物。本文采用射频磁控溅射制备F掺杂ZnO (FZO)透明导电薄膜,重点研究了溅射气压、溅射温度等工艺参数对薄膜性能的影响。为了获得更好的薄膜光电性能,我们采用直流磁控技术与射频磁控技术相结合的方法制备了FZO/Ag/FZO多层结构透明导电薄膜,重点研究了Ag层厚度对薄膜性能的影响。通过实验研究主要得到以下结果：1.采用射频磁控溅射FZO陶瓷靶,在玻璃衬底上制备了FZO透明导电薄膜。当F含量(3at.%)、溅射压强(0.7Pa)、溅射功率(100W)等工艺参数一定时,关键在于控制溅射温度。在溅射温度为350℃时,薄膜性能达到最佳；此时FZO透明导电薄膜的电阻率为6.24×10-2Ωcm, Hall迁移率和载流子浓度分别为1.64cm2/Vs和8.96×1019cm-3,透射率达90%,品质因子最高为1.68×10-4Ω-1。2.室温条件下在玻璃衬底上制备了FZO/Ag/FZO透明导电薄膜,重点研究了Ag层厚度对多层膜各项性能的影响。随着Ag层厚度的变化,FZO/Ag/FZO透明导电薄膜透明导电薄膜的结构形貌、电学性能和光学性能也发生相应变化。当Ag层厚度控制在8nm左右,制备得到了综合性能最佳的透明导电薄膜,在可见光波段的平均透射率高达90%,电阻率为5.65×10-5Ω-·cm,方块电阻为4.71Ω/sq,载流子浓度为6.49×1021cm-3,Hall迁移率为17cm2/Vs,品质因子高达7.41×10-2Ω-1。3.室温条件下在PC柔性衬底上制备了FZO/Ag/FZO透明导电薄膜,并与Ag/FZO和FZO/Ag双层膜进行性能比较。重点研究Ag层的沉积时间对这三种透明导电薄膜性能的影响。Ag层沉积时间对FZO/Ag/FZO透明导电薄膜光电性能有重要影响,随着Ag层沉积时间的增长,电学性能逐渐提高,可见光波段的透射率先增大后减小。更多还原

【Abstract】 Transparent conductive films are functional film material widely used in photoelectronic devices such as liquid crystal display, solar cell, and energy-saving glass, etc. Among this kind of materials within the category, ZnO shows high visible transmittance combined great conductivity and is a promising alternative to ITO due to its abundance in nature, low cost, relatively low deposition temperature, and stability in hydrogen plasma.F-doped ZnO (FZO) transparent conductive thin films were grown by RF magnetron sputtering at different temperature in our work. The influence of deposition pressure and temperature on the film properties is studied. In order to achieve better electrical property, FZO/Ag/FZO multilayer thin films were prepared with both use of RF and DC magnetron sputtering, and the effect of Ag layer thickness on the multilayer film properties was investigated. The main results are obtained as follow:1. FZO thin films were prepared on glass substrates by RF magmetron sputtering from a FZO ceramic target at room temperature. It’s critical to optimize the deposition temperature while other key factors such as F content (3at.%), deposition pressure (0.7Pa), power(100W) are fixed. FZO thin films grown at 350℃have the best properties and the lowest resistivity is 6.24×10-2Ωcm. The best mobility and highest carrier concentration is 1.64cm2/Vs and 8.96×1019cm-3 separately. The optimized figure of merit (φTC) of 1.68×10-4Ω-1 is obtained with the visible transmittance above 90%.2. FZO/Ag/FZO transparent conductive thin films were prepared on the glass substrate at room temperatue. The influence of Ag thickness was mainly studied. The Ag thickness shows great influence on the morphology and photoelectrical properties. The most optimized multilayer thin film is prepared with the Ag layer thickness at 8nm. The average visible transmittance is 90% and the figure of merit is 7.41×10-2Ω-1.3. FZO/Ag/FZO multilayer thin films were prepared on the PC flexible substrates at room temperature, which was compared with FZO/Ag and Ag/FZO bi-layers in properties. The effect of Ag layer deposition time is mainly investigated which turns out playing an important role in the photoelectrical perfoermance.更多还原