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含石墨烯层的半导体功率器件的电—热—力特性研究

Study on Electro-Thermo-Mechanical Characteristics of Semiconductor Power Devices with Graphene Layers

【作者】 缪晓晴

【导师】 尹文言;

【作者基本信息】 上海交通大学 , 电磁场与微波技术, 2011, 硕士

【摘要】 随着三维立体封装的发展,功率器件的功率密度随集成度的增加而不断提高,其中半导体功率器件的可靠性方面的问题越来越突出,相应地,它的电-热-力特性研究就显得非常重要。该硕士论文主要基于混合非线性有限元方法进行含石墨烯层的半导体功率器件的电-热-力仿真分析研究。考虑到材料参数的温变特性,用直接迭代法求解电-热-力之间的非线性耦合问题。基于有限元算法,利用时间差分代替时间微分的方式,成功解决了电-热-力问题中稳态和瞬态的求解。基于典型算例,对比了商用仿真软件以及其它论文的结果,验证了该算法针对含石墨烯层的多栅指HEMT(高电子迁移率晶体管场效应管)这一模型的仿真精度。进一步地,应用上述算法,该硕士论文深入地研究了含石墨烯层的多栅指HEMT的稳态和瞬态的电-热-力特性。研究表明,石墨烯层可以明显降低多栅指HEMT的最高温升以及温升产生的热应力。论文中分别比较了含石墨烯层的多栅指HEMT的在不同条件下对应的数值结果,对石墨烯层的合理应用提供了明确的指导。

【Abstract】 With the development of three-dimensional packaging, power density of power devices with ever-increasing integration. The reliability problems of semiconductor power devices are becoming increasingly prominent. In this case, electro-thermo-mechanical characteristic of these devices is needed to be studied urgently.The study on electro-thermo-mechanical characteristic of semiconductor power devices with graphene layers in this thesis is based on mixed nonlinear finite element method. Considering the temperature-dependent material parameters, the nonlinear electro-thermo-mechanical coupling is solved by the direct iteration method. Based on finite element method (FEM), time differential is replaced by time difference, solving steady-state and transient-state problems. The analysis method is compared to the commercial simulation software and the results of other papers in typical examples, to ensure that the analysis method is of accuracy for the model of multiple-gate HEMT (High Electron Mobility Transistor) with graphene layers.Then, using the above analysis method, in-depth study for steady-state and transient-state characteristic of multiple-gate HEMT with graphene layers is done in this thesis. The results show that graphene layers can reduce the maximum temperature rise and thermal stress which is caused by temperature rise significantly. This thesis compares numerical results of multiple-gate HEMT with graphene layers under different conditions respectively. Clear guidance is given for the reasonable application of graphene layers.

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