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二氧化钛/染料/聚苯胺结构太阳能电池的制备与研究

Study on Dye-sensitized Solar Cell Based on the Structure of Titania/Dye/Polyaniline

【作者】 容齐坤

【导师】 李玲;

【作者基本信息】 暨南大学 , 凝聚态物理, 2011, 硕士

【摘要】 随着全世界经济的不断发展以及矿物质资源逐渐的枯竭,太阳能资源的开发利用越来越受到人们的关注,染料敏化太阳能电池(DSSC)是开发利用太阳能的有效途径之一。DSSC以相对低廉的价格,简单的制作工艺和潜在的高光电转换效率,在大面积工业化生产中具有较大的优势,同时所有原材料和生产工艺都是无毒、无污染的,对保护人类环境具有重要的意义,使它有可能取代传统硅系太阳能电池成为未来太阳能电池的主导。基于目前国内外染料敏化太阳能电池的发展状况,本论文主要做了以下几项工作:(1)通过溶胶-凝胶法制备TiO2多孔薄膜,掺杂不同的金属元素制备M-TiO2 (M=K、Na、Mg、Ca、Co、Sn、Fe、Ni)纳米薄膜电极,XRD、AFM、UV-Vis检测M-TiO2结构、形貌和性能。研究结果表明:掺杂2%(mol%)的金属离子没有改变TiO2的晶格结构,但其吸收峰在可见光区都发生明显的红移,禁带宽度降低,特别是Mg-TiO2和Ni-TiO2电极的禁带宽度都同样达到2.75ev,掺杂后的M-TiO2电极比没有掺杂的TiO2电极更适合做染料敏化太阳能电池的光阳极。(2)从紫苏叶子和花菜提取天然染料作为敏化剂,并对其吸收光谱和敏化效果进行了分析,天然染料在可见光670nm出现吸收峰,对掺杂2%和2.5%molMg离子的TiO2电极起到了很好的敏化效果。(3)采用微乳液聚合的方法制备了本征态的聚苯胺(PANI),使用质子酸掺杂的办法对本征态的聚苯胺进行了导电掺杂。发现本征态态聚苯胺在400nm处有较强的吸收峰,掺杂态聚苯胺在400nm处的吸收峰强度下降以至于消失,而在750nm-800nm处出现较宽的吸收峰。成膜之后的导电聚苯胺材料表面平整均一,粗糙度较小,成膜质量良好,采用四探针测电导率的方法测定了掺杂态聚苯胺的电导率,得到的电导率为2.58S·cm-1。(4)对制备的器件进行了欧姆接触性能和整流特性测试,得到了器件材料之间是良好的欧姆接触,具有良好的整流特性。比较了不同的阴极材料和不同Mg离子浓度掺杂TiO2光阳极对器件光电性能的影响,结果显示用ITO作为对电极比用Al的更有优势,掺杂1.5%molMg离子制备的ITO/1.5.Mg-TiO2/Dye/PANI/ITO太阳能电池器件获得了更好的电池性能,开路电压和短路电流分别达到247mV和0.3 mA。

【Abstract】 With the global economic development and the drying up mineral resources, the development of solar energy resources are received more and more attention, utilizing dye sensitized solar cells(DSSC) is an effective way for using solarenergy. DSSC have a large advantage in low price,simple production process and the potential for high conversion efficiency. It is easy for industrial production in large amount, while all the raw materials and production processes are non-toxic,non-polluting. the safety for the human and environment is apparent which makes it possible to replace the traditional silicon solar cells and to become the leading solar cell.Based on the current development of dyesensitized solar cells both inside and outside China, this paper has mainly carried on the following aspects of work: TiO2 thin films and M-TiO2 (M=K、Na、Mg、Ca、Co、Sn、Fe、Ni) thin films doped by different metal ions were prepared by sol-gel method. The structure, morphology and properties of TiO2 thin films were investigated by XRD,AFM and UV-Vis spectroscopy. The results showed that doping 2%(mol%) metal ions did not change the lattice structure of TiO2, but their absorption peaks can significantly produce red shift in visible light region and the energy band gap decrease,The energy band gap of Mg-TiO2 and Ni-TiO2 are the same of 2.09ev. so that M-TiO2 thin films were better than TiO2 thin films for dye-sensitized solar cells anode.The natural dyes used as sensitizer were extractioned from the Basil leaves and cauliflower. Its absorption spectrum and the effect of sensitization were analyzed, absorption peak of natural dyes appears in the visible 670nm and it has good sensitized effect on the doping of 2% and 2.5% molMg ions of TiO2 electrode.The eigenstates of the polyaniline was prepared by micro emulsion method and doped with protonic acid. the absorption peak of polyaniline appears at the 400nm, and the absorption peak of doping polyaniline decreased at 400nm or maybe even disappeared, but a broad absorption peak appears between750nm and 800nm. The surface fo Polyaniline film is flat and uniform with little roughness. The quality of the film is good. the doped polyaniline conductivity is 2.58S·cm-1 which was measured by four-probe method. The ohmic contact performance and rectifying properties of the solar cell devices were tested,the results showed that the device has a good ohmic contact and a good rectifying behavior. We studied the photoelectricity effects of device with different circumstance,such as with several solar cell cathodes which were made from different materials and different TiO2 anodes which were doped with different consistency of Mg ion. We found out that the electrode which was made from ITO has more advantages than that was made from Al,the ITO/1.5Mg-TiO2/Dye/PANI/ITO solar cell devices with 1.5% mol Mg ion doped get better battery performance,such as open circuit voltage and short circuit current reaches 247mV and 0.3 mA.

  • 【网络出版投稿人】 暨南大学
  • 【网络出版年期】2011年 10期
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