【作者】 杨田林；

【导师】 张之圣；

【作者基本信息】 天津大学 ， 微电子学与固体电子学， 2010， 博士

【摘要】 半导体薄膜材料已经成为微电子学、光电子学、磁电子学、材料表面改性、传感器、液晶显示等新兴交叉学科的重要的基础材料。半导体薄膜材料又分为单质和化合物材料,在化合物半导体薄膜材料中,锌的氮化物、氧化物薄膜以及锌的氧化物与金属构成的多层结构薄膜材料是重要的一部分。由于氮化镓半导体薄膜具有高迁移率的特点,从而得到了广泛的应用。相比之下,锌的氮化物薄膜的研究较少,其中,氮化锌（Zn₃N₂）薄膜的禁带类型、大小还没有完全定论,氮化锌薄膜的电学特性、稳定性以及用途研究的较少。然而,关于锌的氧化物透明导电薄膜得到了广泛的研究,只是电导率进一步提高遇到了难题,为此,人们开辟了金属基的氧化物多层薄膜的研究领域,关于AZO/Cu/AZO多层薄膜的研究较少,且制备工艺需要进一步优化。本论文的主要内容是:制备了氮化锌薄膜和AZO/Cu/AZO多层薄膜,并具体研究了薄膜的结构和光电特性。利用磁控反应溅射法在不同衬底上制备了氮化锌薄膜,溅射靶材为高纯的锌,工作气体为高纯氮气和氩气的混合气体。X射线衍射谱表明氮化锌具有（4 0 0）择优取向,反方铁锰矿结构;通过氮化锌的光学性质测量,可以断定氮化锌是直接禁带半导体,禁带宽度为1.01±0.02eV。研究了氮分压、溅射气压、溅射功率、衬底温度对氮化锌薄膜性质的影响,以及Zn₃N₂/AZO多层结构薄膜的光电特性。利用射频磁控溅射和离子束溅射联合设备制备了AZO/Cu/AZO多层薄膜,研究了Cu层厚度和AZO厚度对AZO/Cu/AZO多层薄膜结构和光电特性的影响。在最佳结构匹配下（40/8/40nm）,AZO/Cu/AZO多层薄膜的电阻率达到了7.92×10-5 ?·cm,透过率达到了84%,薄膜的品质因子为1.94×10-2 ?-1。并从理论上解释了多层薄膜的导电机制,光学传输原理。更多还原

【Abstract】 Semiconductor film materials have become important foundation materials for the emerging interdiscipline such as microelectronics, optoelectronics, magnetic electronics, material surface modification, sensors, LCD （liquid crystal display） and so on. Semiconductor film materials can be divided into elemental and compound materials. Among the compound semiconductor film materials, zinc nitride, zinc oxide films, and multilayer films consisting of zinc oxide films and metal are important parts.GaN films have been widely used because of its high mobility. In contrast, there are few reports on zinc nitride（Zn₃N₂）films. And there is no conclusion about type and value of zinc nitride thin film`s band gap. Besides these, the electrical properties, stability, and use of zinc nitride films are rarely discussed. However, zinc oxide transparent conductive films have been investigated extensively, except that how to further improve its conductivity. For this reason, the multilayer films consisting of metal and oxide have been studied. To our knowledge, there are few reports on AZO/Cu/AZO multilayer transparent conducting films , and the preparation process needs to further optimize. In this paper, we have prepared zinc nitride films and AZO/Cu/AZO multilayer films; also investigated the structural, optical and electrical properties of the films.Zinc nitride films were prepared on different substrates by radio frequency magnetron sputtering using high pure zinc target in N2-Ar plasma. The X-ray diffraction （XRD） analysis indicates that zinc nitride film has the antibixbyite structure and a preferred orientation of （4 0 0）. Zinc nitride is a direct band gap semiconductor with a band gap of 1.01±0.02eV by the measurement of optical properties of zinc nitride. We also analyzed the effect of preparation condition （such as nitrogen partial pressure, sputtering pressure, sputtering power, substrate temperature） on properties of zinc nitride flims, as well as the optical and electrical properties of the Zn₃N₂/AZO multilayer films were studied. AZO/Cu/AZO multilayer films have been prepared by radio frequency （RF） magnetron sputtering and ion-beam sputtering. The effects of Cu thickness and AZO thickness on the structural, optical and electrical properties of the AZO/Cu/AZO multilayer films were discussed, respectively. When the structure match is best （40/8/40nm）, the multilayer films with the resistivity of 7.92×10-5 ?·cm and an average transmittance of 84% have been obtained, the merit figure （FTC） of films can reach to 1.94×10-2 ?-1. We explained conduction mechanism and optical transmission principle of the multilayer films in theory.更多还原