多晶硅太阳电池制作及氧化亚铜薄膜制备研究

【作者】 孙杰；

【导师】 高斐；

【作者基本信息】 陕西师范大学 ， 光学， 2010， 硕士

【摘要】 本论文包含两个部分。第一部分,我们做了与多晶硅太阳电池工业生产相关的研究。第二部分,我们研究了一种具有潜力的太阳电池材料氧化亚铜。太阳电池发展的主要趋势是提高转换效率和降低成本。多晶硅太阳电池是未来最有发展潜力的太阳电池之一。本部分依据多晶硅结构的特点,着重研究了多晶硅太阳电池的工业化生产中各工艺对电池性能产生的影响,得出如下结论：1.采用光谱响应系统和扫描电镜研究了酸腐多晶硅表面织构工艺。研究表明,多晶硅在HF、HNO3和H2O的配比为1：3：2.7的腐蚀液中腐蚀120s后能够得到反射率较低且较均匀的蚯蚓状表面结构。2.利用四探针和Ⅰ-Ⅴ测试研究了不同方阻阻值对电池性能的影响。研究表明,在现有栅线条件下,方阻阻值在45-50Ω/□范围内,所制作的电池有较高的开路电压和短路电流。3.利用Ⅰ-Ⅴ测试研究了不同刻蚀条件对电池性能的影响。研究表明,射频功率过大、刻蚀时间过长、压强太大、气体流量太大都会对硅片表面造成损伤,甚至会危及结区,从而使电池性能下降。4.采用去膜实验、傅里叶变换红外吸收和Ⅰ-Ⅴ测试分别对不同条件沉积氮化硅薄膜的致密性、氢含量和电池性能进行研究。研究表明,多晶硅的表面钝化主要与氮化硅薄膜的致密性有关,而体钝化则主要与氮化硅中的氢含量有关。5.采用扫描电镜和Ⅰ-Ⅴ测试对两种不同铝浆制备的铝背场进行了研究。研究表明,好的铝浆会形成较高质量的背场,增强载流子的收集能力和传导能力,从而提高电池的性能。通过热蒸镀Cu膜并在空气中退火制备Cu2O薄膜。利用X射线衍射(XRD)、能量分散X射线谱(EDX)和原子力显微镜(AFM)研究了已沉积和不同温度退火薄膜的晶体结构、成份和表面形貌,为Cu2O在异质结薄膜太阳电池中地应用作了准备工作。得出如下结论：1.Cu膜在200℃退火30分钟可以得到具有单一成份的Cu2O薄膜；2.四探针测量得到所制备的Cu2O薄膜电阻率为0.22Ωcm；3.用紫外可见光分光光度计(UV-vis)研究了Cu2O薄膜的光学特性,得出其光学带隙为2.4eV。更多还原

【Abstract】 The thesis includes two parts. In the first part, we made some researches on Polycrystalline silicon solar cell production industry. In the second parts, We studied a new material used in solar cell with great potential.At present, the tendency of solar cell development is improving cell’s efficiency and decreasing cost. The poly-silicon solar cell is one of the most potential solar cells in the future. In this part, we mainly researched how the process influence the cell performance according to the structure of poly-silicon in the industrial production of poly-silicon solar cell. The following conclusions were obtained:1. Studied the acid textured of poly-silicon surface structure by spectrum response system and scanning electron microscope. It proves, the poly-silicon can be reduced the reflectivity and gotten the uniform earthworm surface structure in the acid liquid 120s later, which HF:HNO3:H2O is 1:3: 2.7.2. Studied how different square resistances affected the cell performance by four-point probe andⅠ-Ⅴtest. The result proves that the cell can achieve the higher open circuit voltage and short circuit current when the square resistance is between 45-50Ω/□.3. Studied how to affect the cell performance in different etching conditions byⅠ-Ⅴtesting. That proves, higher radio frequency, long time etching, higher pressure and higher gas flow can damage the wafer surface, even endanger the p-n junction, then reduces the performance of cell.4. Studied the compactness of SiNx film, Hydrogen content and solar cell performance in different conditions by stripping film, fourier transform infrared spectroscopy andⅠ-Ⅴtesting. It proves that the poly-silicon surface passivation is related to the compactness of SiNx film, and the body passivation is mainly relate to the Hydrogen content of SiNx.5. Studied the Al back surface field with two different Al pastes by scanning electronic microscope andⅠ-Ⅴtesting. It proves that good Al back surface field can improve the performance of cell.Cu2O films were prepared by thermal evaporation of metallic Cu and annealing Cu films in air, the preparation work of Cu2O films applicated in heterojunction solar cell have been made. The structures, elements and topographies of the as-deposited film and the films annealed at different temperatures were studied by X-ray diffraction(XRD), energy dispersive X-ray spectroscopy(EDX), and atomic force microscopy(AFM). The following conclusions were obtained:1. Cu2O film has been obtained by annealing the as-deposited Cu film at 200℃for 30 minutes.2. Resistance of the Cu2O film is 0.22Ωcm measured by four-point probe.3. Optical property of the Cu2O film was studied using ultraviolet-visible spectrophotometer(UV-vis) and its optical band gap is 2.4eV.更多还原