【作者】 蔡明；

【导师】 邱万奇；

【作者基本信息】 华南理工大学 ， 材料加工工程， 2010， 硕士

【摘要】 AlN薄膜具有一系列优异的物理与化学性能,其禁带宽度为6.2eV,是所有Ш-V族半导体材料中禁带宽度最宽的直接带隙半导体材料,带间跃迁发射波长可深入深紫外波段,是一种很有潜力的半导体发光材料。目前有很多方法用于制备发光AlN薄膜材料,如磁控溅射、金属有机物化学气相沉积、分子束外延等,而过滤电弧离子镀作为一种高离化率,高沉积速率的成膜方法,却因薄膜中含有大颗粒,在发光薄膜的制备中甚少得到应用。本文分别利用挡板过滤和90°弯管磁过滤电弧离子镀法消除大颗粒,制备了AlN,AlN:Cr,AlN:Cu等薄膜,并对其光致发光性能进行了研究。对挡板电弧离子镀制备非掺杂的研究发现,在非本征少量杂质氧元素的作用下,其光致发光谱为在400nm左右的宽带发射峰;该薄膜具有不明显的(100)方向的择优取向,其均方根粗糙度Rms值为22.150nm,Ra值为16.281nm;随着靶基距的增大,AlN薄膜的结构由多晶态逐渐转变为非晶态。磁过滤电弧离子镀Cr掺杂AlN薄膜,在制备过程中没有对基底进行加热,AlN:Cr薄膜为非晶态,其中Cr是以三价离子的状态存在,Cr元素的原子百分含量为5.4%,由于Cr3+形成发光中心,导致有红色的光致发光峰出现。磁过滤电弧离子镀AlN:Cr薄膜的霍尔系数为31.29cm3/C,霍尔迁移率为35.34cm2/ (V·s),载流子浓度为-1.99×1017cm-3。用挡板电弧离子镀制备的Cu掺杂AlN薄膜也呈非晶态,暴露于空气中的薄膜表面存在C、O等元素污染,剥蚀后氧元素迅速降低至4.1%,形成富Al的AlN薄膜,Cu元素的原子百分比为11%,有一价铜元素的存在,正是由于Cu+形成发光,其光致发光峰为中心在450nm的宽带发射峰。挡板电弧离子镀AlN:Cu薄膜的霍尔系数为3.2666cm3/ C,霍尔迁移率为0.2547cm2/(V·s),载流子浓度为1.9×1018cm-3。用磁过滤电弧离子镀制备的AlN:Cu薄膜也呈非晶态,其发光中心也在450nm左右,并发现基底为P型(111)硅和载玻片的发光强度更高,随着基底负偏压的增大,有助于发光强度的提高。为了研究无荧光粉白色发光材料,用磁过滤电弧离子镀的方法制备了多晶AlN:Cr,Cu双层膜,其发射波长范围覆盖蓝紫色和红光发射区。更多还原

【Abstract】 Aluminium nitride thin film has a series of excellent physical and chemical properties,with a wide-bandgap of 6.2eV,AlN is a direct and widest-bandgapШ-V semiconductor material, the bandgap transition can give a deep ultraviolet light, it shows a promising and potential semiconductor luminescent material.Now many technologies have been used for preparation of luminescent AlN thin films such as magnetron sputtering, Metal-organic Chemieal Vapor Deposition, molecular beam epitaxy and so on.The arc ion planting as a high ionization, high deposition rate vacuum coating technology has little usage in the preparation of luminescent materials because of the macroparticles pollution in the films.The AlN,AlN:Cr,AlN:Cu thin film were deposited by sheild plate or magnetic filter arc ion planting so as to eliminate the macroparticles pollution,and also studied the properties of photoluminescence of these films.The non-doped AlN thin film was prepared by shield plate arc ion plating, under the function of some non-intrinsic oxygen impurity, it has a broad band photoluminescence spectrum with its wave crest at about 400nm.This film has an unconspicuous (100) preferential orientation, the surface roughness value Rms is 22.150 nm and Ra is 16.281nm, with the accretion of target- substrate distance, the configuration of AlN thin film got a transition from crystal to noncrystal.No heat was used on the substrate in the preparation of Cr-doped AlN thin film by magnetic filter arc ion planting(MFAIP),this film is noncrystal and the Cr element has an existance of trivalence ion and its atom percent is 5.4%,just because of the existence of Cr3+,the red photoluminescence is observed. The carrier chroma of MFAIP AlN:Cr thin film is -1.99×1017cm-3,and its hall conficient and hall mobile are 31.29cm3/ C and 35.34cm2/ (V·s).The noncrystal Cu-doped AlN thin film was prepared by shield plate arc ion plating, pollution of C、O elements exist in the surface of this film as the film exposed to the air after deposition.After the denudation to the inside of this film,the oxygen is 4.1% and formed an Al-rich AlN thin film,the atom percent of Cu is 11% and has an existance of univalent ion ,owing to that reason,the central photoluminescence spetrum is 450nm.The carrier chroma of shield plate arc ion plating AlN:Cu thin film is 1.9×1018 cm-3, and its hall conficient and hall mobile are 3.2666cm3/ C and 0.2547cm2/ (V·s).Also the noncrystal Cu-doped AlN thin film was prepared by magnetic filter arc ion planting,and find that the P-type(111) silicon and glass substrate have more luminescent intensity and the increase of bias voltage boosts the photoluminescence intensity of AlN:Cu thin film.To study the phospor-free luminescent material, the AlN: Cr, Cu double-layer thin film was deposited by magnetic filter arc ion planting and its luminescent spectrum consists of blue-violet and red emission.更多还原