【作者】 张檀威；

【导师】 黄辉；

【作者基本信息】 北京邮电大学 ， 电磁场与微波技术， 2010， 硕士

【摘要】 本论文工作是围绕任晓敏教授任首席科学家的国家重点基础研究发展规划项目(973计划项目,项目编号：2010CB327600)“新型光电子器件中的异质兼容集成与功能微结构体系基础研究”、教育部“长江学者和创新团队发展计划”资助(No. IRT0609)、“高等学校学科创新引智计划”(简称“111计划”)(项目编号：B07005)第二批建设项目而展开的。氮化硅薄膜和二氧化硅薄膜是物理和化学性能十分优良的功能材料,在半导体光电子器件中有着广泛的应用。氮化硅和二氧化硅薄膜通常利用等离子体增强化学气相沉积法(Plasma Enhanced Chemical Vapor Deposition PECVD)来制备。PECVD法具有沉积温度低,沉积速率快,薄膜致密,工艺重复性好等优点。本论文对使用PECVD方法沉积薄膜进行了深入研究,总结了沉积工艺参数对沉积薄膜性能的影响,系统研究了氮化硅薄膜和二氧化硅薄膜在半导体光电子器件中的应用,并且系统研究了使用HQ-3型PECVD设备沉积氮化硅和二氧化硅薄膜的工艺条件。以下是论文的主要工作。1.使用新型HQ-3型PECVD设备在单面抛光硅片(100)衬底上沉积了一系列氮化硅以及二氧化硅薄膜样品,在实验过程中系统地改变了沉积的工艺参数(例如沉积温度,射频功率,沉积时间以及反应气体流量配比等)。2.对实验所得的氮化硅薄膜样品进行厚度和折射率的测试,根据测试结果讨论了上述工艺参数对氮化硅薄膜的性能(如薄膜厚度以及折射率)的影响,最终通过优化工艺参数获得了性能良好的氮化硅薄膜,薄膜厚度达到350 nm左右,折射率2.0左右。3.对实验所得的二氧化硅薄膜样品进行厚度和折射率的测试,根据测试结果讨论了上述工艺参数对二氧化硅薄膜的性能(如薄膜厚度以及折射率)的影响,最终通过优化工艺参数获得了性能良好的二氧化硅薄膜,薄膜厚度达到250 nm左右,折射率1.5左右。更多还原

【Abstract】 The research included in this thesis is supported by the National Basic Research Program of China undertaken by Prof. Ren Xiaomin: Basic Research on Compatible Heterogeneous Integration and Functional-Microstructure Assemblage for the Development of Novel Optoelectronic Devices (No.2010CB327600), Program for Changjiang Scholars and Innovative Research Team in University (No. IRT0609) and the second construction projects of 111 project (No. B07005).The silicon nitride thin films and the silicon dioxide thin films are materials with good physical and chemical performance which have been widely applied to semiconductor optoelectronic devices. The silicon nitride thin films and the silicon dioxide thin films are commonly deposited through plasma enhanced chemical vapor deposition (PECVD). PECVD method has the advantages of low deposition temperature, rapid deposition velocity and high compactness etc. In this thesis, the deposition of thin films by using PECVD method is investigated and the influences of deposition parameters are summarized. The application of the silicon nitride thin films and the silicon dioxide thin films in semiconductor photoelectron device is researched. Deposition parameters when using HQ-3 PECVD device to deposit the silicon nitride thin films and the silicon dioxide thin films have been researched. The main work of the dissertation is listed below:1. A series of silicon nitride thin films and silicon dioxide thin films samples are deposited on Si substrate (100) by changing the deposition parameters such as radio frequency (RF) power, deposition temperature, deposition duration and gas flow rate when using HQ-3 PECVD device.2. The silicon nitride thin films samples are tested to obtain the thickness and refractive index. The deposition parameters are optimized according to the test results to obtain silicon nitride thin films with good performance, wherein the thickness of the thin films is about 350 nm and the refractive index of the thin films is about 2.0.3. The silicon dioxide thin films samples are tested to obtain the thickness and refractive index. The deposition parameters are optimized according to the test results to obtain silicon dioxide thin films with good performance wherein the thickness of the thin films is about 250 nm and the refractive index of the thin films is about 1.5.更多还原