【作者】 冯涛；

【导师】 刘祖黎；

【作者基本信息】 华中科技大学 ， 材料物理与化学， 2009， 硕士

【摘要】 随着科技的日新月异,电子有机自旋阀的广泛应用,我们迎来了信息时代。电子自旋是电子一个典型的量子属性,巨磁阻效应的发现引发了磁存储和磁记录领域的革命,是自旋电子学的物理基础之一。GMR硬盘读出磁头,GMR磁随机存贮器MRAM,GMR磁传感器的应用昭示着磁电阻效应的应用实现商业化,工业化,并为自旋电子学提供了丰富的研究材料。有机半导体自旋-轨道相互作用和超精细相互作用弱、自旋扩散长度长等优点,是无机半导体材料无法相比的,所以有机半导体成为有机自旋阀理想的中间层材料;与无机有机自旋阀相比,有机有机自旋阀有着更为优良的性能良好的机械性能,工艺简单,制备方便等优势。2004年第一个有机自旋阀的报道引起了全世界的关注,研究有机自旋阀中电子的自旋注入和输运,对自旋电子学研究具有重要意义。作者以镧锶锰氧(La_0.67Sr_0.33MnO₃)为底电极,掺杂态的聚苯胺（PAn）为有机中间层,钴（Co）为顶电极,制备了“La_0.67Sr_0.33MnO₃/PAn/Co”三明治结构的有机自旋阀。对铁磁层材料La_0.67Sr_0.33MnO₃,有机中间层材料掺杂态的聚苯胺（PAn）,自旋阀有机自旋阀“La_0.67Sr_0.33MnO₃/PAn/Co”分别作了研究,并在低温80K下观察到了自旋阀有机自旋阀约为1%的磁电阻效应。本文共分为4章,主要内容如下:第一章:简单介绍自旋阀研究概况,铁磁层材料的选择,有机中间层材料的选择及主要测试手段的概述,给出本文研究目的。第二章:本章介绍了底电极材料La_0.67Sr_0.33MnO₃和中间层材料掺杂态PAn的制备工艺,并对磁学性质,电学性质,化学性质等做了系列研究。第三章:本章介绍了有机自旋阀有机自旋阀的制备工艺,磁学性质,电学性质的研究并对1%的磁电阻效应给出了理论解释。第四章:全文总结与展望更多还原

【Abstract】 With the rapid development of technology and the widespread application of electronic devices, we entered in the information age. Electron spin is a typical quantum electronic properties. The discovery of giant magnetoresistance effect led to the field of magnetic storage and magnetic recording revolution and is one of the physical basis of spintronics. GMR hard disk read heads, GMR magnetic random memory （MRAM）, GMR magnetic sensors application show the application of magnetoresistance commercialization, industrialization, as well as spin-electronics has provided a wealth of research material.Organic semiconductor have the weak spin - orbit interaction and hyperfine interaction and long spin diffusion length, but inorganic semiconductor materials have not, so the organic semiconductor can be as a spin-valve ideal organic intermediate layer material; organic devices have more excellent performance of the mechanical properties of a good, simple process, preparation than inorganic components, and so on. In 2004 year an organic spin valve was reported and was concerned around the world, the research of lectronic spin injection and transport in organic spin-valve e, is of great significance to the spintronics research.The author choosed La_0.67Sr_0.33MnO₃ as the bottom electrode, polyaniline doped state （PAn） as the organic intermediate layer, cobalt （Co） as the top electrode and fabricated "La_0.67Sr_0.33MnO₃/PAn / Co "sandwich structure of the organic spin valve. The author studied Magnetic material of ferromagnetism La_0.67Sr_0.33MnO₃, the middle layer of organic material doped states of polyaniline （PAn）, spin-valve device "La_0.67Sr_0.33MnO₃/PAn/Co". At low temperatures under 80K we Observed the magnetoresistance effect of the spin-valve device is about 1% .This article is divided into 4 chapters, are as follows:Chapter I: a brief overview of the research of spin-valve, the basis for selection of iron magnetic material, the middle layer organic material. an brief summary of the main testing tools and the purpose of this paper.Chapter II: This chapter describes the preparation and the properties of the bottom electrode material La_0.67Sr_0.33MnO₃ and middle layer materials doped state PAn, include magnetic properties, electrical properties, chemical properties, and so on.Chapter III: This chapter describes the preparation and the properties of the organic spin-valve device, magnetic properties, electrical properties.The author give a theoretical explanation about the one percent magnetoresistance effect.Chapter IV: The full text of Summary and Outlook更多还原