【作者】 蒲绍宁；

【导师】 毛军发；

【作者基本信息】 上海交通大学 ， 电磁场与微波技术， 2010， 硕士

【摘要】 随着超大规模集成电路的特征尺寸的不断缩小,当前的工艺技术进入纳米(< 100 nm)阶段,微电子技术已经进入了纳米集成电路时代。在之前的深亚微米工艺阶段,互连线问题已经引起人们的广泛关注,成为集成电路设计的关键问题之一。在纳米级电路中,互连线将产生更为严重的问题,比如金属电阻率的增加,热稳定性下降,可靠性问题日益突出等。为此,互连线新工艺、新结构和新材料的研究逐渐成为热点,也越发重要。碳纳米管作为碳的第四种形态,于1992年被发现,其具有特殊的电学、热学和机械性能,所以在短短的十几年时间中,就受到了全球研究人员的高度重视。其中碳纳米管具有的电阻率低和电流密度大的特点,使它有可能成为优良的互连线材料。本文通过电磁学和量子电子学的方法,对单壁碳纳米管和双壁碳碳纳米管的等效参数进行提取,并得出了单壁碳纳米管束互连线和双壁碳纳米管束互连线考虑线间串扰的等效电路模型。然后以延时和抖动性能为主要指标,对单壁碳纳米管束互连线、双壁碳纳米管束互连线和铜互连线进行对比研究。为使研究更接近实际,采用ITRS2006作为互连线线宽标准,在相同的互连线环境中计算出延时数据进行对比,结果显示单壁碳纳米管束和双壁碳纳米管束互连线在中间层和全局层能够大大提高电路性能;而对于串扰引起的信号抖动,碳纳米管束互连线与铜互连线性能相当。本文工作详细分析了碳纳米管作为未来互连线的电路性能,所提出的电路模型和分析结果对今后碳纳米管互连线的分析和设计有着重要的意义,同时也对今后碳纳米管互连线的制备应用提供了导向。更多还原

【Abstract】 Due to the feature size of VLSI continues shrinking, the process technology has moved into nanoscale (< 100 nm) region, and microelectronics has been developed into the era of nanoscale integrated circuits (IC). In previous deep sub-micron technology, interconnect issue has arised lots of concern and become one of critical issues of IC design. In nanoscale integrated circuits, interconnect is going to encounter more limitation problems, such as the increasing of metal resistivity, degradation of thermal properties and more serious reliability issue. Hence, the research of new process, new structure and new material for interconnect is becoming more and more active and important.CNT (Carbon Nanotube), as the forth form of carbon, was discovered in 1992. Since it has special electrical property, thermal property and mechanical characteristics, researchers have paid much attention on it in the recent decade. CNT has low resistance and high current density, so it may become the next generation interconnect material. In this paper, we extract the equivalent circuit of SWCNT (Single-Walled Carbon Nanotube) and DWCNT (Double-Walled Carbon Nanotube) based on electromagnetism and quantum theory. The equivalent circuit models of SWCNT bundles interconnect and DWCNT bundles interconnect considering crosstalk effect are obtained. Then we compare SWCNT bundle interconnect and DWCNT bundle interconnect with Cu interconnect for the crosstalk-induced delay and glitch performance. In order to make this research useful, we take the line width from ITRS 2006 as the standard, and build the equivalent circuits for Cu, SWCNT and DWCNT respectively. Then we take these equivalent circuits to the same interconnect system, and calculate the delay time and glitch for comparison. We find that SWCNT bundle interconnect and DWCNT bundle interconnect obviously improve the time delay performance in the intermediate level and the global level, but SWCNT bundle interconnect and DWCNT bundle interconnect have the similar crosstalk-induced glitch performance as Cu interconnect.This work has discussed comprehensively about the circuit performance of CNT as future interconnect in nanoscale IC. The proposed models and analysis results are important for future analysis and design of CNT interconnect. Also, it provides suggestions and guidelines for fabrication efforts and application of CNT.更多还原