【作者】 姚香檀；

【导师】 陈世彬；

【作者基本信息】 西安工业大学 ， 光学， 2010， 硕士

【摘要】 在人为和空间辐射环境中,高能粒子和光子引起的辐射损伤是电子系统性能退化甚至失效的主要原因之一。半导体材料的辐射损伤研究是电子系统辐射损伤及其加固研究的基础。现今随着抗辐射器件在商用和民用价值的扩大,抗辐射问题将成为我们新的挑战,而研究高能光子如何在半导体中输运,是抗辐射的重要内容。本文的研究内容属于半导体器件抗辐射问题的基础,这正是本文开展此项研究的意义所在。本文采用了蒙特卡罗模拟方法,开展了高能光子对半导体材料GaAs等的损伤模拟研究,并应用计算机MATLAB软件给出了模拟结果。本文系统地分析了高能光子与物质的相互作用机制,给出了光电效应、康普顿散射和正负电子对生成此三种效应的物理规律及蒙特卡罗模拟方法。本文利用高能光子反应截面数据库,系统地研究了GaAs的高能光子响应特性,给出了不同能量情况下,GaAs材料中发生光电效应、康普顿散射和正负电子对生成此三种效应的概率分析,以及单位长度的GaAs材料中高能光子与之发生反应的次数情况。另外,编写了模拟程序并计算了2MeV的光子在GaAs中的能量沉积及其分布,并对计算结果进行了分析。更多还原

【Abstract】 The radiation damage induced-by energetic particles and photons is one of the main reasons of degradation or even failure of electronic systems in man-made and space radiation environment. The research of radiation damage in semiconductor materials is the basis of that in electronic systems and their hardening. Nowadays, with the expansion of radiation tolerance in commercial use, the problem of radiation tolerance will become our new challenge. And, studying how the energetic photons transfer in semiconductor is the important part of radiation damage research. We will make the solid basis for studying the problem of radiation tolerance, that is the significance of studying in this paper.In this paper, the content of reach on high-energy photon transport in several semiconductors by Monte Carlo Simulation. By use of a forced collision, the calculating efficiency and precision have been improved evidently. Energy deposition of gamma rays is calculated using Monte Carlo Simulation.The Details of the interaction between high-energy photons and material was analysed. The main photons interaction with the material, that is, the photo-electric effect, Compton scattering (effect) and the pair production effects, by studying the response mechanism, to draw the various reaction cross-sections and the particle energy and angular distribution.The GaAs high-energy photons response characteristic is studied by using the database of high-energy photons reaction cross-sections. The photoelectric effect, Compton scattering and the pair production in GaAs materials in different energy situations is probability analysised, as well as the number of reactions between the high-energy photons of units of length GaAs materials and semiconductors. In addition, The deposition of 2MeV photon energy and its distribution are calculated by the program written, and the calculated results are analyzed.更多还原