【作者】 赵娟娟；

【导师】 张胜义；

【作者基本信息】 安徽大学 ， 分析化学， 2010， 硕士

【摘要】 金属硫属化物(如硫化物、硒化物和碲化物等)纳米材料具有独特的光电性质,在太阳能电池等方面有广泛的应用前景。将金属硫属化物与TiO2复合,可以提高材料的光电转换效率,是光电材料领域的研究热点之本论文首先应用聚乙二醇(PEG)作为造孔剂,制备了多孔Ti02薄膜,然后将Ag2Se、PbSe、SnS等金属硫属化合物沉积其表面,制备复合薄膜。采用扫描电镜(SEM)、X射线衍射(XRD)、紫外—可见光谱(UV-vis)等测试技术对所得薄膜进行了表征,探讨了所得薄膜的形成过程及影响因素,并以氙灯作为光源,研究了各种薄膜的光电转换性质。主要研究内容如下：1.Ag2Se／Ti02纳米复合薄膜的制备及其光电性质研究在Ti02溶胶中加入PEG,采用浸渍提拉法首先在导电玻璃上制备多孔Ti02薄膜,然后利用界面反应将Ag2Se沉积到Ti02薄膜上,制备Ag2Se／Ti02复合薄膜。采用XRD、SEM、UV-vis等测试技术对所得薄膜进行表征。以氙灯作为光源,用电化学工作站测试各种薄膜的光电转换性质,探讨溶胶中PEG的加入量对薄膜光电转换性质的影响。结果表明：Ag2Se／Ti02复合薄膜的光电性质优于纯Ti02薄膜,当PEG加入量为10%时其光电流最大。2.PbSe／BaTiO3／Ti02纳米复合薄膜的制备及其光电性质的研究首先以浸渍提拉的方式在导电玻璃上制备多孔Ti02薄膜,然后将溶胶-凝胶法制备的BaTi03复合在TiO2薄膜表面,最后采用界面反应将PbSe沉积到BaTi03／Ti02薄膜上,制备出PbSe／BaTi03／Ti02复合薄膜。用XRD和SEM方法对各种薄膜和纳米粒子进行表征,利用UV-vis测定其光学性质。以氙灯作为光源,用电化学工作站测试各种薄膜的光电流和开路电压,探讨其光电转换性质。结果表明：由于BaTi03的引入,减少了空穴与载流子的无效复合,使所得PbSe／BaTiO3／Ti02复合薄膜能产生大的光电流。3.SnS／TiO2纳米复合薄膜的制备及其光电性质研究首先采用浸渍提拉法在导电玻璃上制备多孔TiO2薄膜,然后在常温下用界面反应将SnS沉积到TiO2薄膜上。用XRD、SEM、UV-vis等测试技术对各种薄膜进行表征。用氙灯作为光源,采用电化学工作站测试各种薄膜的光电流和开路电压,探讨其光电转换性质。结果表明：合成薄膜表面的SnS粒径为几十纳米,由于其在可见光区有强的吸收,拓宽了薄膜的光电响应范围,因而使所得SnS／Ti02复合薄膜能产生大的光电流和开路电压。更多还原

【Abstract】 Metal chalcogenide (such as selenide, sulfide and telluride) nano-materials have special photoelectric properties, and wide potential applications in solar cell and others. The efficiency of photo-electric transformation would be heightened by complexing metal chalcogenide with TiO2, which is a hot field in photoelectric materials.In this paper, the porous TiO2 thin film was first prepared by adding PEG in the TiO2 sol. Then, the composite films were constructed by depositing Ag2Se, PbSe and SnS on the surface TiO2 thin film. The films as-abtained were characterized by Scanning Electron Microscope (SEM), X-ray Diffraction (XRD), Ultraviolet-visible Spectrophotometer (UV-vis). The formation mechanism and the influence factors for the films were exploited. With the xenon lamp light as source, the photoelectric conversion performance of the films was examined.Main work as follows:1. The preparation and photoelectric performance of Ag2Se/TiO2 interface composite filmFirst, the porous TiO2 film was prepared with conduct glass plate by dipping-lifting process in the sol mixing PEG. Then, the Ag2Se/TiO2 composite film was made through the interfacial reaction of Ag2Se. The films as-obtained were characterized by SEM, XRD, and UV-vis. The photoelectric conversion performance of the films was examined by electeochemical workstation with xenon lamp light source. The effect of the amount of the PEG in the sol on the photoelectric conversion was studied. The results show that the photoelectric conversion efficiency of the Ag2Se/TiO2 composite film is higher than that of the pure TiO2 film. The largest photocurrent was obtained by the Ag2Se/TiO2 composite film prepared with the amount of the 10% PEG in the sol. 2. The preparation and photoelectric performance of PbSe/BaTiO3/ TiO2 interface composite filmFirst, the TiO2 film on the conduct glass plate was prepared by dipping-lifting process with sol-gel solution. Then, the BaTiO3 was deposited on the surface of the TiO2 film by sol-gel method. Finally, the PbSe/BaTiO3/TiO2 composite film was prepared by the interfacial reaction of PbSe. The films as-obtained were characterized by SEM, XRD and UV-vis. The photoelectric conversion performance of the films was examined by electeochemical workstation with xenon lamp light source. The results show that the large photocurrent can be obtained with the PbSe/ BaTiO3/TiO2 composite film since the useless recombination of the hole and electron was decreased in the presence of BaTiO3.3. The preparation and photoelectric performance of SnS/TiO2 interface composite filmFirst, the TiO2 film on the conduct glass plate was prepared by dipping-lifting process with sol-gel solution. Then, the SnS/TiO2 composite film was made by depositing SnS on the surface of the TiO2 film at room temperature. The films as-obtained were characterized by SEM, XRD and UV-vis. Using the xenon lamp light as source, the photoelectric conversion performance of the films were examined by electeochemical workstation. The results show that the large photocurrent and open circuit voltage can be obtained with the SnS/TiO2 composite film, since the SnS has strong absorption in visible light district, which broadens the scope of its optical response.更多还原