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大功率半导体器件在电容储能脉冲功率源中的特性研究

Study on Characteristics of Power Semiconductor for Capacitor-based Pulsed Power Supply

【作者】 周照松

【导师】 董健年; 张军;

【作者基本信息】 南京理工大学 , 电力电子与电力传动, 2010, 硕士

【摘要】 本文以电磁发射脉冲功率源为研究背景。脉冲功率源是电磁发射系统的重要组成部分,是电磁发射技术的基础和研究重点,其作用是向电磁发射平台提供高电压、大电流、高功率的电能。采用大功率半导体器件作为脉冲功率源的开关器件,满足了脉冲功率源小型化、模块化、高功率、重频率、全固态等重要发展趋势。在脉冲功率浪涌放电环境下,大功率半导体器件承受着高电压、大电流、快电流上升率等工作特点,工作环境十分恶劣,其工频环境下的工作特性已经不能准确反应其在该环境下的工作情况,脉冲放电环境下的浪涌特性才是需要重点研究的性能指标。本文正是基于此应用背景下,研究大功率半导体器件在电容储能脉冲功率源中的工作特性。文章的主要内容由以下部分组成:(1)介绍电容储能脉冲功率源系统的原理和组成,并计算分析单模块和多模块脉冲成形网络(Pulse Forming Network, PFN)放电过程,引出本文所要研究的大功率半导体器件在放电过程中的作用和基本特性。(2)研究大功率硅堆在电容储能脉冲功率源中的放电特性。分析比较大功率硅堆在模块电源中的安装位置不同,有着不同的放电特性。理论上分析组成硅堆的大功率二极管在模块电源中的特性,并通过实验研究大功率硅堆在电容储能脉冲功率源高电压、大电流、浪涌放电环境下的工作特性。(3)研究大功率可控硅在电容储能脉冲功率源中的放电特性。理论上分析大功率可控硅在模块电源中的特性,并通过实验研究大功率可控硅在电容储能脉冲功率源高电压、大电流、浪涌放电环境下的工作特性。(4)研究大功率可控硅在电容储能脉冲功率源中的温度特性。设计实验测量可控硅在电容储能脉冲功率源放电过程中的结温。利用比热容计算可控硅在电容储能脉冲功率源放电过程中的结温,并与实验测量结温比较。通过分析可控硅在模块电源高电压、大电流、浪涌放电过程中的温度特性,研究器件在模块电源中安全可靠性以及使用寿命。通过对大功率半导体器件在电容储能脉冲功率源中的放电特性和温度特性进行研究,为大功率半导体器件在电容储能脉冲功率源浪涌放电条件下的合理应用,参数设计以及改进提供帮助。

【Abstract】 This dissertation is based on pulse power supply (PPS) of electromagnetic launch (EML). PPS is an important component of EML system. Its role is to provide high voltage, high current, high power to EML system. As the development of PPS is high power, modularization, miniaturization, power semiconductor devices are used as switch in PPS. Normal parameters of semiconductor devices are not adapt to working in pulsed surge discharge environment. Its surge technical parameters are very important to used in PPS.The systematic research is about the pulsed surge characteristics of power semiconductor. The main works are as follows:(1)Introduce the basic theory and composition of capacitor-based pulsed power supply. Analyse discharge process of single module and multi-module pulse forming network (PFN).Give the role and the basic characteristics of power semiconductor devices in surgre discharge process.(2)Research discharge characteristics of power diode stack for capacitor-based pulsed power supply. Analysis and comparison of power diode stack are installed different lacation, and they have different discharge characteristics. Theoretically analyse discharge characteristics of the diode, and experimentally study on surge discharge characteristics of the power diode stack at high voltage, high current, surge discharge working environment.(3)Research surge discharge characteristics of power SCR for capacitor-based pulsed power supply. Theoretically analyse discharge characteristics of power SCR in modular pulsed power supply, and experimentally study on surge discharge characteristics of the power SCR stack at high voltage, high current, surge discharge working environment.(4)Research temperature characteristics of power SCR for capacitor-based pulsed power supply. Design experiment to measure the junction temperature of power SCR in the pulsed surge discharge environment. Use specific heat capacity theorety to calculate the junction temperature of power SCR, and compare with experimental data. Study on the security, the reliability and the service life of the power SCR stack in the conditions of surge discharge.Through this dissertation, a study has been made on surge discharge characteristics and temperature characteristics of power semiconductor devices in capacitor-based pulsed power supply, which has a good guidance on the reasonable application, the parameters design and the perforrmance improve of power semiconductor devices.

  • 【分类号】TN782
  • 【被引频次】4
  • 【下载频次】562
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