【作者】 陶弦；

【导师】 沈应中；

【作者基本信息】 南京航空航天大学 ， 应用化学， 2009， 硕士

【摘要】 随着微电子技术的快速发展,电路的集成度越来越高,线宽也越来越窄,从大规模集成电路发展到超大规模集成电路。银相比其他金属具有极低的电阻率和极好的热传导性,因此在微电子行业引起人们广泛的关注。金属有机化学气相沉积(MOCVD)相比其他物理沉积技术有着独特的优点如:选择性沉积、对薄膜密度以及厚度的可控性等等。这正是制备微电子电路所需的连续、均匀、具有良好阶梯覆盖率的高质量银薄膜互连材料的技术。而研制出适合于MOCVD技术的金属有机配合物(前驱体)是MOCVD技术中的关键。本论文主要工作是设计以及制备两大系列以有机膦稳定的银(I)配合物。以有机膦[PPh3、P(OEt)3、P(OMe)3]作为辅助配体,以丁二酰亚胺类化合物作为主要配体制备得到了两个系列有机膦稳定的丁二酰亚胺类的银(I)配合物[(R3P)m?AgL,m=1,2 or 3;R=CH3O,CH3CH2O,Ph;L=C4H4O2N,C4H4NO3]。对制备得到的配合物用红外光谱、核磁共振、元素分析以及X-射线单晶衍射等方法进行了表征。最后,利用TG-DSC对所合成的配合物的热稳定性和分解机理进行了初步研究。更多还原

【Abstract】 With the rapid development of microelectronics technology, the density of integration of circuits is becoming higher, the linewidth is becoming narrower, and the large scale integration is becoming the Ultra Large Scale Integration (ULSI). Silver is a promising interconnect material in microelectronics due to the lowest resistivity and the highest thermal conductivity. Metal Organic Chemical Vapor Deposition (MOCVD) is one of the best methods for the thin film materials manufacturing, because it provides many advantages over other physical deposition techniques. MOCVD, for example, could deposit the continuous, uniform and good step coverage of high-quality thin silver film. The key to achieve success for MOCVD, however, is the selection of suitable precursors.In this thesis, two series of organophosphine/phosphite stabilized silver(I) succinimide or N-hydroxysuccinimide of type [(R3P)m?AgL] [m=1, 2 or 3; R = CH3O, CH3CH2O, Ph; L=C4H4O2N, C4H4NO3] have been synthesized. The complexes obtained have been characterized by IR spectroscopy, 1H NMR, 13C{H} NMR, elemental analysis and X-ray single crystal analysis, respectively. Finally, the thermal analysis of the complexes was studied by ThemoGravimetry (TG) and Differential Scanning Calorimetric (DSC).更多还原