【作者】 马睿；

【导师】 蔡长龙；

【作者基本信息】 西安工业大学 ， 光学工程， 2009， 硕士

【摘要】 随着MEMS技术中硅基高深宽比微细结构和3-D封装中穿透硅通孔技术的应用,硅的感应耦合等离子体（ICP）刻蚀技术成为国内外研究的热点。本文采用中科院微电子研究中心ICP-98A高密度等离子体刻蚀机,研究了不同工艺参数对硅刻蚀速率的影响,获得较好的硅快速刻蚀工艺;通过对掩蔽层图形化的工艺、掩蔽层材料对硅的刻蚀选择比、交替复合深刻蚀技术中的单步保护层淀积工艺以及硅的各向异性刻蚀工艺等研究,实现了硅基通孔结构。本文研究了硅快速刻蚀技术和硅深刻蚀技术。首先通过大量的实验得出不同工艺参数,如射频功率、气体流量、自偏压以及不同掺杂气体等对硅刻蚀速率的影响,得到了硅快速刻蚀的工艺参数。其次对适用于ICP-98A高密度等离子体刻蚀机的硅深刻蚀技术进行了研究。设计并通过实验得出基于腐蚀和剥离技术的掩蔽层薄膜图形化工艺;通过研究SiO₂、MgO和Al在SF₆中的刻蚀速率以及对硅的刻蚀选择比,得出硅对MgO的刻蚀选择比大于1000:1,适于在硅深刻蚀中作为掩蔽层材料。本文采用交替复合深刻蚀技术实现硅的深刻蚀,分别研究了CF₄、C₄F₈和O₂作为钝化气体的保护层沉积工艺和采用SF₆和CF₄、SF₆和C₄F₈、SF₆和O₂对硅进行各向异性刻蚀的工艺,根据测试结果,选用SF₆和O₂作为刻蚀和钝化气体进行交替复合深刻蚀。在此工艺研究的基础上,对工艺流程进行了优化,综合考虑刻蚀速率、侧壁垂直度、深宽比等因素,提出了分阶段采用不同刻蚀工艺的方法,最终实现深度为420μm,深宽比为4:1,侧壁垂直度达88.2°的硅基通孔结构。通过本论文的研究,获得了一组较好的适用于国产手动等离子体刻蚀设备的硅深刻蚀工艺参数。更多还原

【Abstract】 With the application of silicon high aspect ratio micro-structure on MEMS technology and through-silicon via hole on 3-D packages technology, inductively coupled plasma （ICP） etching technique for silicon has become a hot research topic in civil and overseas. In this article, the influence of different process parameters for silicon etching rate have been studied by ICP-98A high-density inductively coupled plasma etcher, which produced by the Microelectronics Research Center, Chinese Academy of Sciences. Finally, the optimal parameters of high-speed etching silicon can be obtained. Through the following research, including the patterning process of mask, the selectivity of mask materials for silicon, the deposition process of passivation layer and the process of silicon anisotropic etching in Time Multiplexed Deep Etching （TMDE）, the through-silicon via hole has been achieved.The high-speed etching technology and deep-etching technique for silicon have been researched in this article. Firstly, the influence of process parameters on the silicon etching rate, such as RF power, gas flow, self-bias and the different doping gases, have been obtained. By comparing the above results, the optimal process parameters of high-speed etching for silicon have been identified. Secondly, the deep-etching technique for silicon which is suit for ICP-98A high-density inductively coupled plasma etcher has been studied. The patterning process parameters of mask, which based on the corrosion and lift-off technique, have been studied. Researching on the etching rate and the selectivity of SiO₂, MgO and Al for silicon, the selectivity of silicon for MgO is greater than 1000:1. So MgO is selected as a high quality mask material in silicon deep-etching. TMDE technology has been chosen for silicon deep-etching. The deposition process of passivation layer using CF₄, C₄F₈ and O₂, and the process of silicon anisotropic etching using SF₆ and CF₄, SF₆ and C₄F₈, SF₆ and O₂ have been studied respectively. Testing results show that TMDE for silicon can be realized by selecting SF₆ and O₂ as the etching and passivation gases respectively. Considering different factors, such as etching rate, sidewall verticality and aspect ratio and so on, the approach using different etching process in different stages is presented. On the basis of process researching, the process has been optimized. The through-silicon via hole, the depth of 420μm, the aspect ratio of 4:1, the sidewall verticality of 88.2°, has been achieved.In this article, a set of optimal process parameters suiting for domestically manual plasma etcher have been obtained.更多还原