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Ⅱ-Ⅵ族低维纳米半导体材料的制备及性能研究

Preparation and Properties of Low-dimensional Ⅱ-Ⅵ Semiconductor Nanomaterials

【作者】 翟光美

【导师】 刘开平;

【作者基本信息】 长安大学 , 材料学, 2007, 硕士

【摘要】 低维Ⅱ-Ⅵ族半导体纳米材料由于其新颖的物理、化学和生物学特性以及在纳米器件和生物医药领域中的潜在应用价值成为当今纳米技术的研究热点。而形貌和粒度人工可控的Ⅱ-Ⅵ族半导体材料的制备无论从基础研究还是应用的角度来看,都有着重要的意义。本文利用有机物辅助水热法制备了不同形貌的氧化锌,研究表明不同的有机添加剂对产物的形貌有很大影响,乙二胺四乙酸二钠(EDTA)辅助水热法制备的产物为一维棒状氧化锌,十六烷基三甲基溴化铵(CTAB)辅助水热法制备的产物为片状氧化锌,聚丙烯酰铵(PAM)辅助水热法制备的产物为针状团簇氧化锌,而十二烷基苯磺酸钠辅助水热法制备的产物和纯水热法制备的产物类似,形状不规则。研究了不同EDTA用量、温度、时间对产物的影响。并从过饱和度的角度结合负离子配位多面体生长基元理论模型和有机物的软模板作用对不同有机物添加剂对ZnO纳米结构形貌的影响机理作了初步解释。本文还用含硫配体为包覆剂在水浴回流条件下制备了水溶性的CdSe量子点,通过尺寸选择沉积方法得到了不同粒度的样品。并研究了包覆剂、温度、pH值、Cd2+/HSe-比、浓度、镉盐等反应条件对CdSe量子点水相生长过程的影响。研究结果表明:包覆剂、温度、pH值、Cd2+/HSe-比对产物的生长过程影响较大:巯基乙酸比巯基丙酸更有利于CdSe量子点的生长;温度越高,产物生长越快;pH值对含硫配体的包覆效果有影响,pH为11.5时产物的稳定性最好;随着Cd2+/HSe-的增加,CdSe的生长不断变慢。浓度和补偿离子对生长过程影响不大。

【Abstract】 Low-dimensionalⅡ-Ⅵgroup semiconductor nanomaterials have received intensive interests due to their novel physical,chemical,and biological properties as well as the potential applications in nanodevices and bio-medicine field.Synthesis ofⅡ-Ⅵgroup semiconductor nanomaterials which morphology and size can be controlled artificially is of importance for the fundamental research and application.ZnO nanomaterials with different morphology were prepared by organic matters assisted hydrothermal method in the paper.The results of research suggested that organic matters had great influence to the morphology of samples,The samples were rod-like,slice and needle cluster ZnO respectively by adding EDTA Disodium Salt(EDTA),cetyltrimethylammonium bromide(CTAB) and Polyacrylamide(PAM).The samples prepared by Sodium dodecylbenzene sulfonate(SDBS)assisted hydrothermal method had irregular morphology similar to that prepared by pure hydrothermal method.The influence of the quantity of EDTA, temperature and reaction time were also studied.From supersaturation of view,combining Anion Coordination Polyhedron Growth Unity Theory and soft template theory of organic matters,we explained roughly the influence of organics to the growth of ZnO.The water-soluble CdSe QDs were also prepared using thio-ligands as capping agents by water-hath reflux method in the paper.And the CdSe with different size were got by size-selective precipitation method.The influence of thio-ligands,temperature,pH value, Cd2+/HSe- molar ratio,precursor concentration and cadmium salt to the growth of CdSe QDs were studied.The results suggested that thio-ligands,temperature,pH value and Cd2+/HSe-molar ratio had considerable influence:The crystal growth rate in the presence of mercaptoacetic acid(MAA) was faster than that in the presence of 3-mercaptopropionic acid(3-MPA);The reaction temperature was higher,the growth rate of CdSe QDs was faster; The pH value of precursor had influence to the growth of CdSe QDs,when the pH value was 11.5,the stability of sample was best;As the Cd2+/HSe- molar ratio became bigger,the growth rate of CdSe QDs became slower.Precursor concentration and cadmium salt have little influence to the growth of CdSe QDs.

  • 【网络出版投稿人】 长安大学
  • 【网络出版年期】2010年 03期
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