【作者】 蔡晓锐；

【导师】 宋博；

【作者基本信息】 长春理工大学 ， 材料学， 2009， 硕士

【摘要】 ZnSe晶体属直接带隙Ⅱ-Ⅳ族半导体,在蓝光半导体激光器件、非线性光热器件、红外器件以及薄膜太阳能电池等方面有着广泛的应用。使用MBE和MOCVD方法制备ZnSe薄膜的工艺已经比较成熟,但由于这两种方法需要昂贵的设备和很高的运行成本,所以不利于ZnSe薄膜制备技术的推广和发展。本文采用恒电位沉积的方法以ZnCl₂和SeO₂的水溶液为电解液,在ITO透明导电玻璃基底上制备出接近化学计量的、纯立方相的ZnSe薄膜。考察了PH值、电流密度、沉积温度、n(Z²⁺)/n(SeO₃^2-)浓度比、沉积时间等因素对ZnSe薄膜性能的影响。通过正交实验确定了制备ZnSe薄膜的最佳工艺条件:电解液的PH值为6、电解液的电流密度为3mA.cm^-2、电解液的温度为65℃、电解液的n(Zn²⁺/n(SeO₃^2-)浓度比为250:1、沉积时间为10min。采用XRD、SEM、和UV-VIS对ZnSe薄膜的结晶形貌、透光率进行了表征。更多还原

【Abstract】 ZnSe crystal is a direct band gapⅡ-ⅣSemiconductors, ZnSe have a wide range of applications in the Blu-ray diode laser devices, thermal non-linear optical devices, infrared devices, as well as thin film solar cells, and so on。The mathods of MOCVD and MBE preparing ZnSe films have been more mature process, but both methods require expensive equipment and high operating costs, it is not conducive to ZnSe films prepared to promote technology and development。In this paper, the Pure, cubic ZnSe films were prepared with the method of Potentiostatic deposition on a transparent ITO conductive glass substrate from electrolytes containing ZnCl₂ and SeO₂。The effect of the current density, temperature deposition, Concentration ratio of n(Zn²⁺)/n(SeO₃^2-), deposition time on the ZnSe film was studied。Determined the optimum conditions of the preparation of ZnSe films by orthogonal experiments: the PH value of the electrolyte is 6, the current density of electrolyte is 3mA.cm^-2, the temperature of the electrolyte is 65℃, the n(Zn²⁺/n (SeO₃^2-) ratio of the electrolyte is 250: 1, deposition time is 10mins。The surface and cross-section pattern and transmittance of ZnSe films were characterized by SEM and UV-VIS。更多还原