【作者】 杨玲玲；

【导师】 李开航；

【作者基本信息】 厦门大学 ， 微电子学与固体电子学， 2009， 硕士

【摘要】 绝缘栅双极晶体管IGBT(Insulated Gate Bipolar Transistor)由于结合了MOSFET和BJT各自的优点,表现出开关速度高、饱和压降低和可耐高压、大电流等优良特性,是一种用途十分广泛的半导体功率器件,许多领域已经逐步取代了电力晶体管(GTR)和电力场效应晶体管(MOSFET)。目前,国内对IGBT产品的需求量日趋增多,但国内暂时还没有独立的生产厂家,所需的IGBT产品主要依赖进口,因此,开发和研制具有自主知识产权的性能优良的IGBT器件已成为迫切需要,本文鉴于此背景,努力和国内同行一道投入该领域中进行积极探索。本文首先对IGBT的工作原理进行了简述,接着又简单介绍了半导体器件计算机模拟的相关知识。在对目前较为流行的IGBT器件结构载流子存储型槽栅IGBT(CSTBT,Carrier-Stored Trench IGBT)分析的基础上,提出了一种新型的功率半导体器件FH-TIGBT(Full Hole-barrier Layer Trench IGBT),在槽栅下新增的N型空穴阻挡层使得器件具有更低的饱和压降和抗短路能力,同时具有CSTBT的其他优点。本文在工艺上仿真实现了新型结构的IGBT器件,又进一步对其进行了器件模拟,仿真结果验证了其性能上的优越性。此外本文还建立了FH-TIGBT的等效电路模型。在没有相应IGBT的SPICE模型库的前提下,利用等效的电路模型能更方便地实现相关电路的设计。通过合理的选择等效电路模型以及已知的器件特性曲线和有效的参数提取,使得所建立的模型与器件的性能有较好的吻合,得到与预期一致的合理结果。更多还原

【Abstract】 Combining the best attributes of both MOSFET and BJT, the IGBT (Insulated Gate Bipolar Transistor) shows many advantages, such as voltage driving, high switching speed, low saturation voltage, undertaking high voltage and high current. This semiconductor power device has found abroad applications, and gradually takes the place of GTR and MOSFET. At present the high performance IGBT is needed urgently. However, most IGBT come from import because no unaided manufacturer in our country can be found so far. As a result, nowadays many researchers have turned to designing and developing new advanced IGBT devices.In this thesis, we firstly introduce structure and principle of the device, and then briefly address simulation of the semiconductor device. Based on CSTBT, a new structure of IGBT has been proposed, which is called FH-TIGBT (Full Hole-barrier Layer Trench IGBT). With a layer of type N under the trench gate, this new device costs lower saturation voltage, but owns stronger ability of carrying out short circuits comparing to CSTBT. Besides, it contains all other advantages of CSTBT. The process simulation of the novel device has been implemented in this work, which verifies advantages of the new device.We build an equivalent circuit model of FH-TIGBT. Without IGBT model in SPICE, this equivalent circuit model can be used in the circuit design expediently. The implementation contains device characters simulated, effectual parameters extracted and equivalent circuit model refined. We verified that the equivalent circuit model matches the characters of the new device perfectly. From the simulation results, the advantages of this novel semiconductor device can be seen obviously.更多还原