【作者】 周从树；

【导师】 顾志光； 顾以理；

【作者基本信息】 复旦大学 ， 电子与通信工程， 2009， 硕士

【摘要】 随着半导体工业的图形化工艺进入100纳米以下的范畴,分辨率增强技术(RET),如光学临近修正(OPC),已成为补偿物理设计者的设计图形与光刻工程师光刻出的图形间的失真的标准手段。普遍认为服务于制造的设计(DFM)是光刻线条修正及光学临近修正领域的关键词之一,它减少了设计和制造之间的复杂交互。DFM强有力地进入到硅芯片制造流程中的不同阶段,通常在生产周期中的不同时间点,以及工艺设备和测量仪器中。本论文中,提出了OPC RET方法可以整合到芯片制造流程中,这包括基于工艺窗口的两次曝光技术以及与基于窗口的OPC模型。以迎合不断缩小的特征尺寸带来的挑战。这篇论文还提出了广义的OPC概念,即光学和工艺临近效应修正。随着半导体工业向着更小的关键尺寸方向发展,需要使用更复杂的修正方法,以确保晶圆和掩模版制造的目标公差。提出了一种DFM探索,用以补偿工艺临近效应,它涵盖了厚光刻胶到测量仪器。更多还原

【Abstract】 Since patterning technology in the sub 100nm regime was introduced into the semiconductor industry,Resolution Enhancement Technologies(RET) such as Optical Proximity Correction(OPC) has become a standard practice to compensate the pattern transfer distortion gap between the physical designer and the lithography engineer.On the other hand,Design for Manufacturing(DFM) is being widely accepted as one of the keywords in cutting edge lithography and OPC technologies,which alleviates complex interactions between design and manufacturing.DFM solutions impact the design-to-silicon flow at various stages,often during different time-points in the product life cycle, and often with both process equipments and metrology tools.In this thesis,the pre-OPC RET implementation methodology that can be integrated into the tape-out flow is proposed.It includes the hybrid sub-resolution assisting feature (SRAF) implementation methodology by using the process window aware OPC model,and the process window based double exposure methodology.As a complete mask synthesis flow,these RET methodologies including OPC alleviate the potential challenge brought the shrinking technologies.Another contribution of this thesis is the proposal of a general OPC concept that stands for Optical and Process Correction.As the drive of the semiconductor industry towards smaller features sizes requires more sophisticated correction method to guarantee the final tolerances in both the wafer manufacturing and mask making,A DFM approach is proposed to compensate the process proximity effect that arises from the thick film overlay metrology.更多还原