【作者】 李烨；

【导师】 刘益春；

【作者基本信息】 东北师范大学 ， 材料物理与化学， 2009， 硕士

【摘要】 随着社会发展和科技的进步,人们对具有良好发光性质材料的需求日益增强,相关研究越发深入。氧化锌(ZnO)是一种宽禁带直接带隙半导体材料,属Ⅱ-Ⅵ族化合物,室温下禁带宽度达到3.37eV,激子束缚能达到60meV,理论上可实现室温下的较强紫外受激辐射,在紫外发射器件、紫外激光器件等领域具有广阔的应用前景。同时,ZnO在表面声波器件、透明电极、气体传感器等方面也得到了广泛的应用。目前,ZnO薄膜的制备方法有很多,比如,溶胶-凝胶法(Sol-gel)、溅射法(Sputtering)、分子束外延生长法(MBE)、原子层外延生长法(ALE)、金属有机物化学气相沉积(MOCVD)、脉冲激光沉积(PLD)等。其中,PLD是近年发展起来的先进的薄膜生长技术,它通过在高真空条件下用高能激光烧蚀ZnO靶材,生成的蒸发物在加热衬底上沉积并最终生长成ZnO晶体薄膜。与其他生长方法相比,PLD具有操作简单、反应过程迅速、能保持制备的薄膜和靶材组分一致、可以在较低温度条件下制备等优点。本文以PLD作为生长方法,改变衬底温度和脉冲激光强度,在Si(100)衬底上生长了一系列ZnO薄膜,并用X射线衍射(XRD)、光致发光(PL)、共振拉曼(Raman)等测试方法对薄膜的结构和发光特性进行了表征,具体分析并讨论了衬底温度和激光强度对ZnO薄膜相关性质的影响。更多还原

【Abstract】 With the fast development of society and technology, the needs of good-quality light-emitting materials are more imperative and the researches about these materials are going much deeper than before.Zinc Oxide (ZnO) is anⅡ—Ⅵcompound wide-band-gap semiconductor with a band gap of 3.37eV and a large exciton binding energy of 60 meV at room temperature. Wide-band semiconductors attract much more attention because of the needs of short-wavelength devices. Theoretically, it can realize stimulated UV emission at RT, which makes it a promising material for using in ultraviolet light-emitting and laser diodes. Meanwhile,it also has been widely used in surface acoustic wave devices,transparent electrodes,sensors and so on.There are many methods for growing ZnO films, such as sol-gel method, sputtering, molecular beam epitaxy (MBE), atom layer epitaxy (ALE), metal-organic chemical vapor deposition (MOCVD), Pulsed laser deposition (PLD) and so on.PLD is a newly developed films growth technique which can fabricate high-quality films compared with other techniques, because of its advantages of simple hardware,atomic-layer control obtained by adjusting the laser energy density and repetition rate. In this technique, high density laser ablates the ZnO ceramic target and produces ZnO plume depositing on heated substrate in high vacuum background.In this paper, ZnO films were prepared on Si (100) substrates at various substrate temperatures and laser energy, and then annealing was conducted.The films were examined by X-ray diffraction (XRD), Photoluminescence (PL), Raman and Ellipsometry. Through the researches of the structural and optical properties of ZnO films, we analysis and discuss the effects of deposition parameters on the grown ZnO films. The results suggested that high quality ZnO films with highly c-axis oriention can be prepared by PLD.更多还原