NiZn铁氧体薄膜及其性能研究

【作者】 游昕；

【导师】 刘颖力；

【作者基本信息】 电子科技大学 ， 材料物理与化学， 2009， 硕士

【摘要】 NiZn铁氧体材料作为一种微波旋磁铁氧体材料,具有高的旋磁特性,低损耗、宽频率范围、高功率负荷以及良好温度稳定性等特点,广泛应用于隔离器、相移器、环形器、调制器等微波铁氧体器件。随着现代电子器件的小型化与微型化,NiZn铁氧体薄膜的应用日益广泛,如高频薄膜电感、高频薄膜变压器等。本文以射频磁控溅射法制备NiZn旋磁铁氧体薄膜为主要研究内容,通过理论分析与大量实验,针对薄膜材料的主要技术参数,分析退火温度,基片,靶材等多种因素对薄膜性能的影响,并对其微波旋磁性能进行了研究,研制既具有优异的磁性能又适合于在高频下应用的NiZn铁氧体薄膜材料。首先通过靶材制备,基片清洗等前期准备,完成薄膜制备需要达到的客观条件,然后使用射频磁控溅射仪在Si(100)基片上制备NixZn(1-x)Fe2O4铁氧体薄膜。通过对薄膜样品的XRD、AFM、SEM、VSM测试数据进行分析,进而明确了制备薄膜过程中溅射功率、溅射气压、薄膜厚度、基片温度等前处理工艺对薄膜性能影响,用于选取最优的解决办法对薄膜进行制备。然后对后处理工艺和基片、材料配比等其他影响薄膜性能的因素加以分析。最后再对薄膜按照微波旋磁器件的要求,通过传输式谐振腔进行铁磁共振线宽ΔH的测试,综合上面各种参数的影响,对制备参数进行了优化选择。在Si(100)基片上,在1Pa气压下溅射,膜厚为800nm,经过800℃退火,得到Ni0.6Zn0.4Fe2O4薄膜,饱和磁化强度Ms=150e.m.u/cc,矫顽力Hc=110Oe,铁磁共振线宽ΔH=140Oe的NiZn旋磁铁氧体薄膜材料。更多还原

【Abstract】 NiZn ferrite as one kind of microwave ferrite materials has been found widely application in isolator, phase shifter, circulator, modulator with its good gyromagnetic property, low loss, broad band width, high power and good temperature stability. With the development of miniaturization of modern electronic devices, NiZn ferrite thin film is becoming more important and widely applicated in high frequency thin film inductor, thin film transformer and thin film circulator and Isolator. This dissertation mainly researched on the properties of NiZn ferrite thin films deposited by RF magnetron sputtering. The relationships between the main technical paramters of NiZn films and processing parameters such as annealing temperature, substrate conditions and target materials had been studied and the microwave property also studied theoretically and experimentally. Then NiZn ferrite thin film materials with good magnetic properties had been prepared which had the potential application in high frequency and microwave thin film devices.In order to deposite NiZn thin film, target materials are prepared and substrates are cleaned firstly, then NixZn(1-x)Fe2O4 thin film is deposited on the Si(100) substrate by Rf magnetron sputtering. By means of using XRD, AFM, SEM and VSM to measure microstructure and magnetic properties of thin film samples, the relationship between the technical performance of NiZn films, such as sputtering power, sputtering pressure, film thickness and substrate temperature, and the pro-processing has been studied and clarified. This is useful for selecting the best solution for thin film deposition. Other factors which could also affect the thin film’s performance, like post-processing, substrates and material content, have also been analyzed. Moreover, the ferromagnetic resonance linewidthΔH measuring has been done by transmission resonance cavity at 9.385GHz (wave length=3cm) according to the optimization requirements of gyromagnetic device. Eventually, the depositing parameters have been decided considering the general influences resulted from the factors mentioned above. The Ni0.6Zn0.4Fe2O4 thin film has been deposited on the Si(100) subtracts, under the conditions that atmospheric pressure = 1 Pa, thickness of film = 800nm, annealing temperature = 800℃. This key properties of the NiZn gyromagnetic ferrite thin film is as following: Ms=150e.m.u/cc, Hc=110Oe,ΔH=110Oe.更多还原