节点文献

ZnO薄膜及其发光器件的PLD法制备研究

【作者】 曹艳

【导师】 汪辉; 史小波;

【作者基本信息】 上海交通大学 , 软件工程, 2008, 硕士

【摘要】 ZnO是一种宽禁带半导体材料,为六方晶体(纤锌矿)结构,与GaN的晶格结构相同。室温下ZnO的禁带宽度为3.37eV左右,激子束缚能为60meV,是继GaN之后的又一理想的光电材料。激光脉冲沉积(PLD)法是近年来发展起来的先进的薄膜生长技术,它是在高真空背景下用高能激光烧蚀ZnO靶材生成蒸发物淀积在加热衬底上生长晶体薄膜的。本论文利用PLD技术在半绝缘(001)取向的GaAs单晶片上制备ZnO薄膜,在400℃退火条件下,通过As扩散成功制备了P型ZnO薄膜。继而按照p型ZnO薄膜的制备条件,成功制备了p-ZnO/n+-GaAs异质结发光器件。在室温下电致发光测试中,即可以测试到ZnO层缺陷深能级的蓝绿电致发光谱,同时也测试到GaAs层的红外电致发光谱。在此基础上,对ZnO同质p-n结发光器件的制备进行了初步研究。

【Abstract】 ZnO is a wide direct band gap semiconductor with band gap of 3.37eV and exciton binding energy of 60 meV at room temperature. It has the same structure as GaN and become a new opto-electronic material for application in new optical devices as a promising substrate material for GaN.Pulsed laser deposition(PLD)is a newly developed film growth technique. In this technique, high density laser ablates the target and produces ZnO plume depositing on heated substrate in high vacuum background. In this thesis, we use the PLD technology in the semi-insulating (001)-oriented single-chip GaAs prepared ZnO thin film. in the annealing 400℃conditions, the successful adoption of preparation As the spread of the P-film Zn0. then In accordance with our p-type ZnO thin films prepared by the conditions,We have successfully prepared p-ZnO / n +-GaAs heterojunction devices.At room temperature electroluminescence test, which can be tested to the deep level defects ZnO layer of electric blue-green spectrum, but also to test GaAs layer of electric infrared spectra.On this basis,we have preliminary studied Zn0 homogeneous pn junction light-emitting devices preparation.

节点文献中: 

本文链接的文献网络图示:

本文的引文网络