【作者】 刘洋；

【导师】 徐晓峰；

【作者基本信息】 东华大学 ， 等离子体物理， 2009， 硕士

【摘要】 VO₂是一种相变型氧化物,具有金属一半导体转变的相变特性,其相变时具有电学和光学突变性质,这一特性使VO₂薄膜在众多领域,如自动调节温度的智能窗、激光防护薄膜、红外探测仪、光学数据存储材料等具有好的应用前景。钒可以处于相邻的价态且价态多达十几种,这使得VO₂薄膜的制备对工艺要求比较苛刻,以目前的制备手段来看,VO₂的应用仅仅局限于少数领域,并且成本昂贵。因此,如何进一步降低其工艺难度和制备成本是人们所关心的。纯VO₂的相变温度点位于68℃附近,这个温度点略高于室温,也局限了它的应用范围。大量研究表明,通过掺杂手段可以降低其相变温度点,因此,在发展VO₂制备工艺的时候,人们也会关心这种工艺是否能适用于掺杂。本文利用空气对金属钒薄膜进行氧化,通过控制温度和氧化时间,制备出了高纯度VO₂薄膜。同时为了证明这种制备工艺对掺杂有效,我们用金属钨对薄膜进行掺杂实验,获得了较好的效果,同时通过分析得出了一些有意义的掺杂手段。第二章主要讨论了在重复传统溅射法实验时遇到的问题,并提出本文的技术路线。第三章主要介绍空气氧化法制备VO₂薄膜,分析了其氧化过程,寻求到了适合制备VO₂薄膜的氧化温度范围,并介绍了如何控制氧化时间。另外,对金属钒薄膜的致密度如何影响VO₂薄膜的性能做了些研究。第四章主要介绍掺钨实验,在金属钒薄膜中加入单层钨膜制备出钨钒合金膜,然后通过氧化使钨原子在薄膜中进行热扩散,从而达到掺杂目的。通过分析单层杂质膜对掺杂量的局限性,提出了利用多层杂质膜的手段来提高掺杂量。更多还原

【Abstract】 Vanadium oxide（VOP₂） is a phase change oxide.It has metal-insulator transition（MIT） property,which shows abrupt changes in electrical and optical properties.VO₂ thin film have a bright application future in many fields such as intellectual window which can change the temperature automatically,laser protective film,infrared detector,optical data shortage material. There are over ten valence states of Vanadium.So the process to fabricate VO₂ thin film is very rigor.The techniques to fabricate VO₂ nowadays are just in a few fields and the cost is very high. To simplifies the process and reduce the cost is now attracted many attentions.The phase change temperature of pure Vanadium oxide（VO₂） is around 68℃,a little higher than room temperature,which localized it’s application field.Many researches have proved that impurity doping can reduce the phase change temperature.So to develop a VO₂ fabricating technique that can suitable for impurity doping has become the hot research topic.In this paper,high purity VO₂ thin film was obtained though oxidizing the metal Vanadium thin film in air and controlling the oxidizing time and temperature.In order to know if this technique is also suitable for impurity doping,Wolfram is doping into the film and obtained a good effect.A effective doping technique was obtained through analyzing.The second part of this paper discussed the problems confronted in repeating the traditional sputtering method.And the technique method of this paper was pointed out.The third part of this paper introduced the air oxidizing method to fabricate VO₂ thin film. The oxidizing process is analyzed and the proper oxidizing temperature to fabricate VO₂ thin film is obtained.The method to control oxidizing time is also introduced.In addition,the effect of the density of the metal Vanadium to the property of VO₂ thin film was investigated.Wolfram doping experiment is introduced in the fourth part of this paper.Wolfram-Vanadium -metal（W-V-metal） film is firstly obtained by doping Wolfram into Vanadium-metal and thermal diffusion of Wolfram during oxidizing.The method to increase the doping content by using multilayer impurity film was pointed out by analyzing the effect of monolayer impurity film to the doping content.更多还原