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AAO模板封装有机电致发光材料的研究

Study on the Encapsulation of Organic Light-emitting Diode Materials with AAO

【作者】 陈君

【导师】 王宏智;

【作者基本信息】 天津大学 , 应用化学, 2007, 硕士

【摘要】 有机电致发光器件(OLED)具有平板化、主动发光、高亮度、高对比度、响应速度快、驱动电压低等优点,成为目前新材料及平板显示技术领域的研究热点。要实现OLED的大规模产业化,目前亟待解决的首要问题是器件的高性能封装。本文以多孔铝阳极氧化膜(AAO)为模板封装OLED,利用AAO孔壁防止水汽和氧气渗入,可显著提高OLED的寿命和分辨率,促进平板微显示技术的发展。为此,本文通过电化学与吸附沉淀的方法依次在AAO模板内沉积聚苯胺(PANI)、8-羟基喹啉铝(Alq3)、Cu纳米线阵列,为组装器件结构为ITO/PANI/Alq3/Cu的OLED奠定基础。采用二次阳极氧化法,控制氧化电压60V,获得孔密度高、排布高度有序的多孔阳极氧化铝模板(AAO)。采用逆电剥离方法将氧化膜从铝基体上剥离,并用磷酸去除阻挡层,得到贯通的纳米孔,孔径约120nm。在此基础上,以AAO为模板,吸附沉淀法制备Alq3纳米线阵列。即将AAO模板浸泡在Alq3浓度不低于2g/L的丙酮溶液里,当溶液充满AAO纳米孔,然后取出干燥,可获得纳米线。利用SEM、红外光谱、XRD和荧光光谱对纳米线的形貌、结构和性能进行了表征,测试结果表明:AAO模板内沉积的为Alq3纳米线,直径约100nm;纳米级的Alq3粒子和Alq3线都具有光致发光特性,其荧光光谱峰值强度都高于Alq3的丙酮溶液,且纳米线的峰位发生蓝移;Alq3纳米线中的分子受到一维结构的限制,使有机小分子的转动减弱,使非辐射复合减少。以AAO为模板,控电位单槽法分别制备出PANI、Cu纳米线阵列;双槽法制备出PANI/Alq3、PANI/Cu多层纳米线阵列。采用SEM、TEM观测了纳米线阵列的形貌;红外光谱分析了PANI和PANI/Alq3纳米线的结构;XRD分析了PANI/Cu多层纳米线的结构。实验结果表明,可用多槽法将PANI、Alq3、Cu依次沉积在AAO模板的纳米孔内,获得结构为ITO/PANI/Alq3/Cu的有机电致发光器件。

【Abstract】 Organic light-emitting diodes (OLEDs) are promising devices in the field of display because of active luminescence, low power consumption, wide viewing angle, good contrast, and quick response time. In order to relize industrialization of OLED presently, the high-powered encapsulation is mostly required to resolve. In this thesis, anodic aluminum oxide(AAO) is applied as the template to prepare the organic light-emitting device (OLED). Under the protection of AAO’s hole wall, the resolution and the life of OLED have been improved greatly. This will undoubtedly enhance the development of microform display devices. PANI、Alq3、Cu of nanowire arrays were prepared by electrochemical deposition and absorption into the nanoporous anodic alumina oxide (AAO) templates. These experiments will make great contributions to the encapsulation of OLEDs with structure of Cu/Alq3/PANI/ITO.The anodic aluminum oxide membranes were prepared by two-step oxidation in the solution of oxalic acid when the voltage is 60V, and stripped from the aluminum substrate adopting strip against electricity technique. The oxide barrier layer was chemically dissolved from bottom side of the film in phosphoric acid. The diameters of AAO’s holes are 120nm.The Alq3 nanowire arrays were prepared in the pores of the AAO membrane using absorption method: the AAO was dipped into the acetone solution (>2g/L) of Alq3 and after the pores of the AAO were filled enough, the Alq3 nanowires were prepared in AAO through dryness. The morphology, structure and optic properties of the nanowires were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), Infra-red(IR) spectrometer, Fluorescence spectroscopy. Experiment results indicate that: the diameter of Alq3 nanowire is about 110nm; the peak of photoluminescence of the Alq3 nanowires and Alq3 nano-particles have exhibited a blue shift, compared with Alq3 dissolved in acetone solution. The nanowire arrays of PANI and Cu were deposited into AAO by single-bath method, moreover, the PANI/Alq3 and PANI/Cu multiplayer nanowires were prepared by dual-bath method using AAO templates. The morphology of nanowires were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM). The structures of PANI, PANI/Cu and PANI/Alq3 nanowires were studied by IR and XRD. It indicates that the multi-bath method is suit for the deposition of PANI, Alq3 and Cu successively. Then, the OLED with structure of ITO/PANI/Alq3/Cu can be prepared.

  • 【网络出版投稿人】 天津大学
  • 【网络出版年期】2009年 05期
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