【作者】 李传山；

【导师】 沈建兴；

【作者基本信息】 山东轻工业学院 ， 材料学， 2007， 硕士

【摘要】 PZT压电厚膜材料具有良好的压电性能,它兼顾了块体材料和薄膜的优点。本文采用丝网印刷的方法在Al₂O₃基板上制备了PMS-PNN-PZT四元系压电厚膜陶瓷材料。研究了压电厚膜的烧结温度、保温时间、烧结气氛对其压电、介电等性能以及显微结构的影响。用XRD和SEM分析材料的相组成、厚膜定位及显微结构,结果表明,在密封埋粉的PbO气氛中,烧结温度1060℃,保温时间80min,制得一种性能良好的压电厚膜陶瓷材料。其中,该压电厚膜压电常数d₃₃为160pC/N,相对介电常数ε_r为1112,机械品质因数Q_m为1250,机电耦合系数Kp为0.52。研究了组成对PMS-PNN-PZT压电厚膜性能的影响,结果表明,样品Q_m随着PMS的增加而增大;加入少量PNN组分,即可达到显著提高材料ε33/ε0的目的。探讨了极化条件（极化场强、极化温度、极化时间）对PMS-PNN-PZT压电厚膜性能的影响,在极化场强为4 kv/mm,极化温度为130℃,极化时间为25min,得到综合性能良好的压电厚膜。选择Ce、Mn、Sr为掺杂元素,对不同掺杂比例对压电厚膜性能的影响进行了讨论。掺适量的Ce可以提高d₃₃、ε_r;适量的Mn掺杂,可以使样品的Q_m提高;少量Sr掺杂可以提高样品的d₃₃、Kp和Q_m。讨论了目前制造PZT压电厚膜所存在的基板与厚膜之间的高温扩散的共性问题。探讨了SiO₂作为缓冲层对PMS-PNN-PZT压电厚膜的压电性能以及显微结构的影响。用XRD和SEM分析材料的相组成、厚膜定位及压电层的显微结构,结果表明,缓冲层有效地阻止了三者之间的相互扩散,样品的d₃₃、ε_r等都有所提高,所制得的压电厚膜压电常数d₃₃为190pC/N,相对介电常数ε_r为1210,机械品质因数Q_m为1330,机电耦合系数K_p为0.54。实验表明,丝网印刷用厚膜浆料分散剂的应用改善了厚膜浆料的分散性和均匀性。适当时间的超声分散可以有效地减少浆料的团聚现象,从而改善了厚膜浆料的分散性和均匀性。适当增加丝网印刷的次数,可以减少气孔的生成,从而提高样品的性能。用等静压的方法对压电厚膜进行压力处理,提高了其烧结致密性,从而使样品的压电常数提高。更多还原

【Abstract】 PZT piezoelectric thick film with eminent properties, either has the merits of the block material or that of thin film. PMS-PNN-PZT piezoelectric thick film ceramic material was prepared on Al₂O₃ substrate by screen printing method .Effects of sintering temperature,soaking time and sintering atmosphere on piezoelectric and dielectric properties and microstructure of piezoelectric thick film was studied. Phases, thick film orientation and microstructure were analysed by XRD and SEM, The results show that piezoelectric thick film ceramic material with excellent performance was maded at sintering temperature of 1060℃for 80 min in PbO atmosphere. Thereinto, piezoelectric constant d₃₃ is 160 pC/N, comparative dielectric constantε_r is 1112, mechanical quality factor Q_m is 1250, electromechanical coupling coefficient Kp is 0.52.Effects of the compositions to performances of the PMS-PNN-PZT piezoelectric thick film were studied, The results shown that ,Qm of the sample was increased along with the content of the PMS ,ε33/ε0 of the sample was increased remarkably by adding a few PNN component. Effects of the polarized conditions （polarized field intensity, polarized temperature, polarized time） to performances of the PMS-PNN-PZT piezoelectric thick film were discussed, the piezoelectric thick films with excellent performances were obtained at the condition of polarized field intensity is 4 kv/mm, the polarized temperature is 120℃, the polarized time is 25 min.Choosing Ce, Mn, Sr as the doped element, Effects of different doped proportions to performances of the PMS-PNN-PZT piezoelectric thick film were studied. d₃₃ andε_r of samples were enhanced by adulterating the right amount of Ce ; Q_m was enhanced by adulterating the right amount of Mn; d₃₃, Kp and Q_m were enhanced by adulterating a few of Sr.The high temperature diffusion among the substrate, below electrode and the PMS-PNN-PZT film was studied; Effects of SiO₂ buffer on piezoelectric and dielectric properties and microstructure of PMS-PNN-PZT piezoelectric thick film was studied. Phases, thick film orientation and microstructure were analysed by XRD and SEM, the results show that the diffusion among three layers was effectively prevented by the buffer, d₃₃ andε_r of sample are improved, the piezoelectric constant d₃₃ is 190 pC/N, comparative dielectric constantε_r is 1210, mechanical quality factor Q_m is 1330, electromechanical coupling coefficient Kp is 0.54.The experiments indicated that, the dispersivity and the uniformity were improved by using dispersant agent of thick film slurry which was used for screen printing. The conglobation phenomenon of Slurry was decreased by supersonic dispersing for a right of time, thus the dispersivity and the uniformity of thick film slurry were improved. The blowholes were decreased by increasing the number of the screen-printing , thus performances of the sample were enhanced.The density of the sample was improved by a isopress-treatment, thus the piezoelectric constant of the sample was enhanced.更多还原