【作者】 王晓红；

【导师】 廖斌；

【作者基本信息】 华东师范大学 ， 无线电物理， 2008， 硕士

【摘要】 高速超宽带通讯和低成本是当今无线通讯技术重要的发展方向,而低噪声放大器(LNA)作为无线接收机的第一级,其良好的性能是实现正常通讯的重要保障,所以研究超宽带CMOS低噪声放大器意义重大。本论文正是基于先进的CMOS工艺,对宽带、超宽带无线应用中的关键模块--超宽带低噪声放大器进行研究、设计,仿真得出高性能的UWB LNA结果。本论文在参考大量相关文献的基础上,基于TSMC 0.18μm CMOS工艺选取合适的超宽带低噪声放大器的拓扑结构,进行深入分析和研究,通过ADS软件对TSMC的NMOS管S参数、噪声指数和功率等信息进行仿真,获得特定条件下的MOS管数值;采用新颖的电路结构(共源共栅源极去耦结构和共源结构)设计了两款符合超宽带标准的CMOS低噪声放大器,结果达到设计指标。通过Cadence的Virtuso软件,给出这两款超宽带CMOS低噪声放大器的版图设计。在超宽频带内实现了小于4dB的噪声系数和12dB的平坦增益,输入输出匹配优于-10dB,而功耗仅为30mw。更多还原

【Abstract】 High speed ultra-wideband communication and low cost are significant directions of the development of wireless communication technologies nowadays.On the other hand,as the first stage of wireless receiver,low noise amplifier plays an important role in the communication system.So the research of ultra-wideband CMOS LNA is imperative under this situation。The key component of wide-band wireless applications-wideband low noise amplifier(LNA)based on advanced CMOS process was exactly researched in this thesis.The aim of this thesis is to design and simulate high performance wide-band LNAs.Based on numerous references and TSMC 0.18μm CMOS process,this thesis chose proper topology to furture analyse and study two novel UWB LNAs.Firstly, simulat the TSMC’s NMOS with ADS and choose the right parameter from the results to start the work.Secondly,designed two kinds of UWB CMOS LNA with the topology of cascode with source inductor degeneration and common source under TSMC 0.18μm CMOS process.The LNA achieved less than 4dB noise figure and 12dB gain in the pass band with less than-10dB input and output match.The power dissipation of the LNA were merely 30mw.At last,the layout was designed with Cadence Virtuso.更多还原