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锌渣氧粉铟浸出的新工艺研究

The New Technology of Enhancing Indium Leaching from Zinc Oxidation Slag Dust

【作者】 阳健

【导师】 黎铉海;

【作者基本信息】 广西大学 , 化学工艺, 2008, 硕士

【摘要】 本文综述了铟、锌渣氧粉以及机械活化、加压氧化工艺在湿法冶金浸出应用上的情况,研究采用机械活化(边活化边反应)和加压氧化两种方法强化锌渣氧粉浸铟的工艺,得出不同工艺条件下锌渣氧粉在工业硫酸体系中浸铟的规律,以及浸铟的较优工艺条件。实验结论如下:(1)锌渣氧粉通过机械活化或者加压氧化工艺浸铟时,都可缩短浸出时间,强化浸出过程,为贫铟物料的铟浸出开辟了两条新的工艺路线。在搅拌磨活化正交试验中,各因素对铟浸出率的影响程度为:硫酸初始浓度>搅拌转速>反应时间>液固比。(2)综合各方面因素,用搅拌磨活化装置浸铟时,在实验范围内最佳工艺条件为:活化反应时间为150 min、液固比为8、酸初始浓度为5 mol/L、搅拌速度为575 r/min。此时,铟浸出率可由常规自热浸出时的68.1%提高到91.2%。(3)在双氧水加压氧化浸铟时,实验范围内最佳工艺条件为:液固比为8、反应时间为150 min、搅拌速度为575 r/min、反应温度为90℃、釜内压力为0.5 MPa(空气加压)、硫酸初始浓度为5 mol/L、双氧水(H2O2含量为30%)用量为0.5 mL/g矿。此时,铟浸出率可由常规恒温90℃(无氧化剂)浸出时的77.6%提高到90.2%。在高锰酸钾加压氧化浸铟时,实验范围内最佳工艺条件为:液固比为8,反应时间为150 min,搅拌速度为575 r/min,反应温度为90℃,釜内压力为0.5 MPa(空气加压),硫酸初始浓度为3 mol/L,高锰酸钾用量为25 g/kg矿。此时,铟浸出率可由常规恒温90℃(无氧化剂,硫酸初始浓度为5 mol/L)浸出时的77.6%提高到89.5%。(4)在酸初始浓度较低时,氧化剂的加入使氧化浸出效果优于机械活化的效果。高锰酸钾加压氧化浸出能在较低硫酸初始浓度下达到较高的铟浸出率,且在硫酸初始浓度较高时,高锰酸钾加压氧化浸出仍然具有较大的优势。

【Abstract】 Based on the summary of the investigations on the leaching process of indium,zinc oxidation slag dust as well as the application of mechanical activation and pressure oxidation in non-ferrous metallurgy,the effects of different technologcial conditions and leaching process on leaching efficiency of indium in the reaction of zinc oxidation slag dust with sulfuric acid by mechanical activation or pressure oxidation was studied,we can get the optimum conditions of leaching indium.From the experiments,conclusions can be drawn as follow:(1)The technology of leaching indium in the reaction of zinc oxidation slag dust with sulfuric acid by mechanical activation or pressure oxidation with oxidant can improve the leaching efficiency of indium and decrease the leaching time.So two new path for enhancing leaching indium from zinc oxidation slag dust can be provided.In the orthorhombic experiment of mechanical activation in a stirring mill,the effect of each factor on leaching efficiency of indium is:the initial concentration of acid>stirring speed>reaction time>ratio of liquid-solid.(2)Associating with the equipment and the cost of energy,the optimum conditions of leaching indium by the mechanical activation in a stirring mill are:the reaction time is 150 min,the ratio of liquid-solid is 8,the initial concentration of sulfuric acid is 5 mol/L,the stirring speed is 575 r/min.In the optimum conditions the leaching efficiency of indium which was 68.0%in conventional leaching process was improved to 91.2%.(3)Associating with the equipment and the cost of energy,the optimum conditions of leaching indium by pressure oxidation with hydrogen peroxide in a high pressure reaction kettle are:the reaction time is 150 min,the ratio of liquid-solid is 8,the initial concentration of sulfuric acid is 5 mol/L,the stirring speed is 575 r/min,reacting temperature is 90℃,air pressure is 0.5 MPa,the dosage of 30%hydrogen peroxide is 0.5 mL/g.In the optimum conditions the leaching efficiency of indium which was 77.6%in conventional leaching process(90℃)without oxidant was improved to 90.2%.The optimum conditions of leaching indium by pressure oxidation with potassium permanganate in a high pressure reaction kettle are:the reaction time is 150 min,the ratio of liquid-solid is 8,the initial concentration of sulfuric acid is 3 mol/L,the stirring speed is 575 r/min,reacting temperature is 90℃,air pressure is 0.5 MPa,the dosage of potassium permanganate is 25 g/kg.In the conditions the leaching efficiency of indium which was 77.6%in conventional leaching process(90℃,the initial concentration of sulfuric acid is 5 mol/L)without oxidant was improved to 89.5%.(4)In the condition of dilute initial concentration of acid,the leaching efficiency of indium is better in pressure oxidation process than mechanical activation process because of the application of hydrogen peroxide in the leaching process.In the condition of dilute initial concentration of acid,we can get the best leaching efficiency of indium by pressure oxidation with potassium permanganate.And when the initial concentration of acid is dense,the leaching efficiency of indium by pressure oxidation with potassium permanganate is the best in all of the processes.

  • 【网络出版投稿人】 广西大学
  • 【网络出版年期】2009年 01期
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