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基于红外热分析技术的半导体功率器件质量评价方法

The Quality Evaluating Method of Semiconductor Power Devices Based on Infrared Thermal Analysis

【作者】 张奕轩

【导师】 孔学东;

【作者基本信息】 广东工业大学 , 微电子学与固体电子学, 2007, 硕士

【摘要】 任何温度高于绝对零度(OK)的物体,都在不停地进行红外辐射。红外测温是根据物体的红外辐射能和物体本身材料特性所决定的辐射系数来探测其准表面温度的一种方法。红外测温技术应用于微电子学方向,在电子电路、半导体元器件、功率模块的失效定位和可靠评价上发挥极其重要的作用。大功率器件的失效主要是由热问题引起的。作者利用建立各类功率器件标准热分布图(STP)的方法,某类功率器件的红外热分布图与对应型号的标准热分布图进行对比,可以快速、有效地判断其可靠性水平,提前发现已接近故障状态的器件,避免军用装备在关键时刻的突然故障。以3DD5H和3DD114B两类军品级低频高反压大功率晶体管为例,在温度循环和热冲击两种可靠性试验条件后电参数仍然符合详细规范中的要求,但焊料与底座已出现明显空洞,导致热阻增大,结温升高并且分布不均匀,热集中处正是对应于焊料与底座的空洞,因此用红外热分析方法比简单探测器件空洞的方法更能突出问题的关键所在。在经过加电热冲击后,器件发生二次击穿,击穿点位于发射极边缘部位,说明是由于正偏状态下,正偏二次击穿临界电压随温度的升高而减小,发射极电流集边,致使二次击穿发生。但饱和压降并没有明显增大现象,这是由于存在高掺杂低阻衬底所致。在红外热分析和故障诊断的基础上,为满足微电子器件微细化和高密度化的发展要求,利用数字图像处理技术中的各种插值方法对红外热分布图进行改善,插值后进行对比,发现双向三次样条插值方法较双向三次插值(三次卷积法)连续,图像更加锐利,边缘过渡更加平滑。经验证在温度低于100℃时插值效果较好,误差不超过0.5℃,与未插值时准确度提高了35.9%;当温度达到120℃时,插值效果变差,误差达到13℃,但比未插值时准确度提高了41.7%。

【Abstract】 Anything can radiate infrared if its temperature is above absolute zero. Infrared detecting temperature is a method which is based object’s infrared radiation and emission determined by its material characteristic. Infrared detecting temperature play a important role in failure position and reliability evaluating at circuits, devices and power modules.Failure of power devices induced mainly by over heat. Comparing thermal profile of one device with standard thermal profile(STP), we can evaluate its reliability quickly and effectively, and find the approach failure of devices. Suddenly failure of our military equipment can be avoided.After reliability test of temperature cycle and thermal impact, the electrics parameter of two power transistor 3DD5H and 3DD114B with low frequent and high bias voltage is still eligible, but their solder and pedestal has a lot of hollow. After reliability test of thermal impact applying power, second breakdown take place in the device. As forward base state, the current is collecting at the edge of emitter and the breakdown point was found in there. Because of high doping underlay, the VCES of device don’t increase obviously.Using digital image processing technology, infrared thermal profile can be improved. Comparing to the bicubic interpolations, the method of spline interpolation is better. Image is processed by the former can be more continuously, sharply and its brim transiting more smoothly. When temperature is below 100 degree, the error of interpolation temperature is less than 0.5 degree, the veracity is improved 35.9 percent. When temperature is about 120 degree, the error of interpolation temperature is less than 13 degree, the veracity is improved 41.7 percent.

  • 【分类号】TN303;TN219
  • 【被引频次】6
  • 【下载频次】166
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