电子束蒸发制备掺铝氧化锌透明导电膜

【作者】 王子健；

【导师】 卢景霄；

【作者基本信息】 郑州大学 ， 凝聚态物理， 2007， 硕士

【摘要】 在常规能源日益枯竭的今天，开发利用可再生能源已经成为各国的研究热点。太阳能做为一种洁净的可再生能源具有洁净、无污染等特点，因而极具应用价值。太阳电池可以直接将光能转化为电能，是目前利用太阳能的主要手段之一。其中晶硅薄膜太阳能电池作为第二代太阳电池的代表具有广阔的应用前景。晶硅薄膜太阳电池中普遍采用透明导电膜作为电极材料。目前常用的透明导电膜有：ITO、SnO₂：F、ZnO：Al等。其中ZnO：Al（又称AZO）具有无毒、无污染、低成本等特点被视为晶硅薄膜电池理想的电极材料。在本文中我们围绕本实验组多晶硅薄膜太阳电池的研究工作，利用电子束蒸发的方法在普通玻璃衬底上制备了AZO透明导电膜。分析了掺杂量、衬底温度对电子束蒸发制备AZO薄膜光电性能的影响。并分别利用磁控溅射、电子束蒸发制备了晶硅薄膜电池背表面的电极。利用扫描电子显微镜、X射线衍射、标准四探针、紫外可见光近红外分光光度计、Ⅰ-Ⅴ特性测试仪等实验手段分析了所制备电极材料的表面形貌、结晶情况、电学性质、光学性质以及背电极与N型Si：H膜的接触特性。结果表明：（1）衬底温度为200℃，掺Al₂O₃量为2.5％w/w时，电子束蒸发法制的AZO薄膜电阻率最低可达5×10^-3Ωcm。可见光范围内平均透过率为85％。（2）与磁控溅射方法制备的AZO薄膜相比，电子束蒸发制备的AZO与N—Si：H的接触电阻较小。可见光范围内的复合反射率较高。对N型Si：H无损伤。更多还原

【Abstract】 As the Conventional energy source is getting dried up day by day to develop and use the new pure renewable energy already become various countries’ the research hot spot. The solar energy is one kind of pure renewable energy has a lot of characteristic such as clean doesn’t have the pollution and so on, thus solar energy has great application value.Solar cell which changes the energy of light into electrical energy directly is one of the most popular methods to use solar energy. And the crystalline silicon thin-film solar cell as a present of the second-generation solar cells has a very broad application prospect. The transparent conductive oxide is widely used as electrode material in the crystalline silicon thin-film solar cell. There are several transparent conductive oxides that are commonly used such as: ITO; SnO₂:F;ZnO:Al and so on. Among all of them ZnO:Al （also called AZO） has many advantages as non-toxic, does not have pollution, and low cost. So it is regarded as the ideal electrode material for crystalline silicon thin-film solar cell.Revolving our experimental group’s research topic: the research on the polycrystalline silicon thin-film solar cell, in this article ZnO:Al films （AZO） were prepared on glass by using electron beam evaporation. And we analyzed the properties of the films changes with the doping quantity; the substrate temperature and so on. And we also made the rear electrode of the cell with both magnetic sputtering and electron beam evaporation. We investigated the properties of the films such as surface topography; crystallization; electrical property; optical property and the contact of the rear electrode/N-Si:H with scanning electron microscopy; X-ray diffraction spectrophotometer; standard four-probe meter; UV-Vis-NIR spectrophotometer; I-V characteristic tester.The results shows that:（l）The films made at 200℃with the 2.5%w/w doped with Al₂O₃ have a very low resistivity as 5×10^-3Ωcm . And the average of the transmissivity in the visible area is 85%.（2）The AZO made on the N-Si:H films by electron beam evaporation have a lower contact resistance and a higher composite reflectivity in the visible area compare with that made by magnetic sputtering. And do not hurt the N-Si:H films.更多还原