基于SiGe工艺的宽带低噪声放大器设计与实现

【作者】 谢李萍；

【导师】 刘光祜；

【作者基本信息】 电子科技大学 ， 电路与系统， 2007， 硕士

【摘要】 SiGe工艺具有优异的射频性能，更由于其较高的性价比，被广泛应用于移动通信、卫星定位和RFID等市场；SiGe工艺还可以与常规的数字模拟电路相集成，制造出功能完整的SoC芯片。目前采用SiGe材料制作射频集成电路已成为国际上的研究热点。随着无线电应用越来越广泛，使用的带宽和频率也越来越高，因此宽带、超宽带的无线电应用研究具有重要意义，本论文正是基于先进的SiGe工艺，对宽带、超宽带无线应用中的关键模块——宽带低噪声放大器进行研究、设计，制造出高性能的RFIC芯片。本论文在参考大量相关文献的基础上，对宽带低噪声放大器的各种设计方法进行了深入分析和研究，详细比较了各种传统和新型的宽带低噪声放大器电路结构，在此基础上采用新颖的电路结构设计了两款带宽超过3倍频程的宽带低噪声放大器芯片，达到了优异的性能指标。采用新型带通滤波器匹配技术设计的800M—2.4GHz宽带低噪声放大器芯片，在宽频带内实现了2.1dB～3dB的噪声系数和17dB的平坦增益，输入输出匹配优于-10dB，而功耗仅为11mW。通过对芯片在探针台上进行的初步测试表明测试结果与仿真结果相吻合。首次采用电流复用技术实现了3.1G—10.6GHz超宽带(UWB)低噪声放大器，仅以10mW功耗和0.2mm~2的芯片面积实现了最小2.7dB的噪声系数和大于18dB的增益。推导出了电流复用结构低噪声放大器输入阻抗的具体数学表达式，对于采用该结构设计宽带低噪声放大器具有重要的指导作用。更多还原

【Abstract】 SiGe process is widely used in mobile communication, satellite location and RFID markets because of its high performance and cost-performance ratio. It is easy for SiGe process to integrate RF, digital and analog circuits on a chip, resulting in SoC which has the entire function. More and more RFICs (Radio Frequency Integrated Circuit) are fabricated with SiGe process now.The frequency and bandwidth is increasingly higher and wider along with the widely use of wireless communications, so it is very important to research the wide-band and ultra wide-band circuits. This thesis exactly researched the keycomponent of wide-band wireless applications--wide-band low noise amplifier(LNA) based on advanced SiGe process. The aim of this thesis is to design and manufacture high performance wide-band LNA RFICs.Based on numerous references, this thesis researched various design methods of the wide-band LNA thoroughly, compared all kinds of traditional and novel circuit structures; and then designed two novel ultra wide-band LNAs which both obtained more than triple frequency bandwidth.Designed an 800M-2.4GHz wide-band LNA using the input band-pass filter matching structure. The LNA achieved 2.1dB～3dB noise figure (NF) and 17dB gain in the pass band with less than -10dB input and output match. The power dissipation of the LNA was merely 11mW. It was indicated that the measured results matched well with the simulated results through on chip test.First time realized a 3.1G-10.6GHz ultra wide-band (UWB) LNA with the current-reuse technology. It achieved minimal noise figure of 2.7dB and more than 18dB gain with only 10mW power and 0.2mm~2 chip size. This thesis conducted out the mathematic expression of the current-reuse LNA’s input impedance which has significant guiding meaning.更多还原