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柔性ITO透明导电薄膜的研究

A Study of Transparent and Conductive Flexible Films with ITO

【作者】 王伟华

【导师】 王德苗;

【作者基本信息】 浙江大学 , 电子科学与技术, 2007, 硕士

【摘要】 透明导电氧化物(TCO)薄膜兼具透明性和导电性两大特性,能广泛应用于平面显示器、太阳能电池、节能视窗、透明电磁屏蔽等领域。当前,显示技术越来越趋向于柔性化、超薄化,这大大促进了人们对柔性TCO薄膜的研究,其中在低软化点的柔性衬底上低温制备优质的ITO薄膜,已经成为国际上的热门研究课题。本文通过对柔性ITO薄膜的特性、制备工艺研究,设计出并低温制备出了透光率大于75%、电阻率为8×10-5Ω·cm的SiO2/ITO/Ag/ITO膜系的PET基柔性ITO薄膜。论文取得的成果和创新点主要有:1.针对低温溅射难以生成低电阻率的ITO薄膜这一难题,通过理论分析和实验研究,创造性地提出了“在线紫外辐照”提高反应气体氧在低温下活性的工艺路线,大幅度降低了ITO的电阻率也提高了ITO薄膜在可见光区透射率,为PET等柔性基底上低温生长优质的TCO薄膜提出了一种十分有效的方法。这一工艺方法有较大的理论指导意义和实用价值,在国内外尚未见报道。2.针对有机衬底在溅射时容易裂解、放气大的问题,提出了在PET衬底上先镀覆SiO2阻挡层的结构方案,有效地阻止了有机裂解物对ITO薄膜的污染,也阻挡了有机衬底的放气,并增强了薄膜的附着力。这为柔性ITO技术提出了一种新颖的结构。3.为了进一步提高薄膜的电导率,我们根据薄膜光学理论并通过对纳米金属薄膜特性的研究,设计出SiO2/ITO/Ag/ITO的膜系结构,在衬底不加热的工艺条件下大大提高了薄膜的电导率,同时,通过理论计算和系列实验摸索出了透明导电Ag层的制备参数。4.在上述研究的基础上,我们用磁控溅射法在常温下制备出了光电性能良好的柔性SiO2/ITO/Ag/ITO膜系,其最低电阻率达到8×10-5Ω·cm,可见光区透射率大于75%,达到了国内先进水平。本研究对低温制备柔性ITO膜技术有较大的理论指导意义和重要的实用价值。

【Abstract】 Transparent conductive oxide (TCO) films with both transparent and conductive characteristics, have been widely used in graphic LCD, solar battery electrodes, and other energy-saving window. It developed rapidly in recent years. Along with the display technology developed toward flexible, thin-oriented, the research of flexible TCO films is undertaken accordingly. And one of the most important researches is to deposit ITO thin films with lower resistivity for analogous visible transmittance on organic substrates at room temperature.Properties of flexible ITO films and preparation techniques are studied, and flexible SiO2/ITO/Ag/ITO films with better optoelectronic properties had been successfully prepared at room temperature. The resistance achieved 8 × 10-5 Ω ? cm and the visible transmittance is greater than 75%. The major works and innovation in this paper are as follows:1. To solve the difficulty of depositing ITO films with low resistivity at room temperature, we use UV irradiation to increase the oxidated activity of O2, thereby enhancing the conductivity and transmittance in the visible region of the films. This is an effective way to deposit ITO films with better optoelectronic properties on PET substrates at room temperature. Until now, no investigation of this way has been reported, and it have great significance in both theoretic and application area.2. To avoid the cracking of substrate during deposition, we use SiO2 as a buffer layer on PET substrate, it decreases the higher substrate gas rate and enhances the film bonding. It’s a novel structure which can effectively prevent the organic substrate gas and impurities through, and improve adhesion properties of flexible ITO films.3. To seek lower resistivity, we designed SiO2/ITO/Ag/ITO structures according to the thin film optical theory and the study of properties of metal nano-films. The structure can improve the conductivity of the films without heating. And the parameters for depositing a transparentconductive layer of silver had also been got through a series of theoreticalcalculations and experiments. 4. Based on the study above, flexible SiO2/ITO/Ag/ITO films with highperformance has been successfully prepared with magnetron sputtering.The resistance achieved 8 × 10-5 Ω ? cm and the transmittance in visibleregion is greater than 75%.The investigation of depositing flexible ITO films at low temperature in this paper has great significance in both theoretic and application area.

【关键词】 透明导电氧化物薄膜(TCO)ITOPET衬底银膜层
【Key words】 TCOITOPET substrateAg layer
  • 【网络出版投稿人】 浙江大学
  • 【网络出版年期】2007年 03期
  • 【分类号】TM242
  • 【被引频次】9
  • 【下载频次】1262
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