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射频磁控反应溅射法制备HfO2薄膜的研究

Study on HfO2 Thin Film by RF Magnetron Reactive Sputtering

【作者】 许宁

【导师】 刘正堂;

【作者基本信息】 西北工业大学 , 材料学, 2007, 硕士

【摘要】 金刚石具有高红外透过率、低吸收系数、抗热冲击性好、耐磨擦等一系列优异的性能,是用于长波红外波段(8~12μm)理想的窗口和头罩材料。然而金刚石在750℃以上时很容易发生氧化,导致透过率急剧下降。在金刚石表面镀制抗氧化增透涂层可以满足其在高速、高温条件下应用。氧化铪(HfO2)具有优良的物理、化学性能,抗高温氧化能力强,可用作金刚石抗氧化保护涂层。在国外,HfO2用作金刚石抗氧化涂层的研究已经展开,并取得进展;在国内,有关HfO2抗氧化保护涂层的研究还未见报道。本文主要研究射频磁控溅射法制备HfO 2薄膜的工艺对其成分、结构、光学特性及沉积速率的影响规律,为将HfO2用作金刚石红外增透及抗氧化膜系奠定基础。主要研究工作及结果如下: 利用OPFCAD软件在金刚石衬底上设计了HfO2//Diamond和HfO2/a-Si:H//Diamond增透膜系,并对所设计的膜系进行了结构敏感因子及结构偏差分析。膜系设计结果表明,在金刚石双面镀两种膜系后在长波红外波段的红外透过率均大于85%,可满足高速红外窗口和头罩使用要求。 研究了主要工艺参数对HfO2薄膜沉积速率的影响,对工艺参数进行了优化。试验结果表明,HfO2薄膜的沉积速率随溅射功率增大而增大,随气体压强和O2流量增大而减小,衬底温度对沉积速率无明显影响。正交试验结果表明O2流量对沉积速率的影响最大,并确定了获得薄膜最大沉积速率的工艺参数。 对制备的HfO2薄膜进行了X射线光电子谱(XPS)、X射线衍射(XRD)和椭圆偏振光谱(SE)分析。结果表明,沉积态薄膜中Hf和O原子结合形成了HfO2化合物;薄膜中Hf和O元素的原子百分比基本符合HfO2的化学计量比;沉积态薄膜中HfO2为单斜相,主要以多晶状态存在;在椭偏光谱分析范围(0.4~1.8μm),HfO2薄膜的折射率随波长的增大而快速下降,波长大于1.2μm后趋于稳定值1.95,而且薄膜的吸收很小。

【Abstract】 Diamond has excellent properties such as good transmittance in the infrared wave band, low absorption coefficient, high resistance to thermal shock and friction. So diamond is an ideal material for airborne LWIR (8-12μm) windows and domes. However, diamond is easily subject to oxidation in air at temperatures greater than 750℃, and the optical transmittance is degraded greatly. It’s useful to prepare anti-oxidation and anti-reflective films on the diamond surface to meet the need for applications of high-speed or high temperature environment. Hafnium oxide (HfO2) is a promising anti-oxidation material with good physical, chemical properties and good anti-oxidation property. Some progress has been made in the researches about HfO2 anti-oxidation films overseas. But no domestic work has been done on HfO2 optical and protective films. Researches of the paper mostly concentrate on preparation of HfO2 films by magnetron sputtering and the functions of experiment parameters on films components, structure, optical properties and deposition rate. The main contents and results are listed as follows:HfO2/Diamond and HfO2/a-Si:H//Diamond antireflection film systems are designed by OPFCAD, and the sensitive factors and deviation of the films’ structure are analyzed. Results show that the average transmittance in LWIR waveband can exceed 85% after both films systems are deposited on the surfaces of diamond, which can meet the requirements high-speed infrared windows and domes.The influence of main parameters on deposition rate is discussed, and the main parameters are optimized. The results show that deposition rate of films increases with the sputtering power increasing, and decreases with sputtering pressure and O2 flux increasing, and deposition rate is insensitive to growth temperature. The orthogonal experiment results show that the effect of O2 flux on the deposition rates is the most significant, and the parameters to get high deposition rate are decided. XPS and XRD analyses as well as SE transmission spectrum tests are carried out.

  • 【分类号】TB383.2
  • 【下载频次】322
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