【作者】 赵海龙；

【导师】 刘正堂；

【作者基本信息】 西北工业大学 ， 材料学， 2007， 硕士

【摘要】 类金刚石碳（DLC）膜，具有高硬度、高耐磨性、低摩擦系数、高热导率、高红外透过率、高化学稳定性等一系列与金刚石膜相似的优异性能。与金刚石膜相比，其具有沉积温度低、沉积面积大、膜面平整光滑、成本低等优点，是一种优良的红外增透保护材料。本文研究了射频磁控溅射法制备无氢和含氢DLC膜的主要工艺参数对薄膜沉积速率的影响，并对两种不同工艺下制备的薄膜性能进行了分析比较。主要研究结果如下： 利用OPFCAD软件在Si衬底和ZnS衬底上设计了单面、双面镀单层DLC膜的增透膜系，并对所设计的膜系进行了结构偏差分析。膜系设计结果表明，Si衬底上镀DLC膜后可以很好的实现3～5μm波段的红外增透。DLC／GaP（厚层）增透保护膜系在长波红外波段对ZnS衬底能起到较好的增透作用。 在射频磁控溅射设备上进行了制备无氢和含氢DLC膜的工艺试验，系统地研究了射频功率、溅射气压、气体流量以及衬底温度对薄膜沉积速率的影响规律。结果表明，对于无氢DLC膜，沉积速率随射频功率的增大而增大，随溅射气压的增大先增大后减小，衬底温度对沉积速率的影响不大。而在制备含氢DLC膜过程中发现，沉积速率随射频功率、溅射气压、CH₄气体流量的增大而增大，随着衬底温度的升高呈现先增大后减小的趋势。 对所制备的DLC膜进行了AFM、XRD、Raman分析。结果表明，随着功率的增大，两种薄膜的粗糙度均有所增大，含氢DLC膜的粗糙度整体要比无氢DLC膜的低。DLC膜由sp²键镶嵌在sp³键基体中构成。所制备的两种DLC膜均呈非晶态。 使用FITR光谱仪分析了Si衬底上镀DLC膜的红外透过性能。在3～5μm波段，两种膜都有着很好的增透效果，峰值透过率达97％以上。在ZnS衬底上成功制备出DLC／GaP（厚层）膜系，在长波红外波段对ZnS具有较好的红外增透效果，峰值处可增透10％以上。更多还原

【Abstract】 Diamond-like carbon (DLC) film is an amorphous carbon film that exhibits a series of excellent properties such as high hardness, good chemical inertness, high thermal conductivity, good transmittance in infrared and low wear coefficient. Compared with diamond film, DLC film has lower deposition temperature, larger deposition scale and smoother surface. It can be used as a new IR antirefiective and protective material. Researches of this paper concentrate mostly on the preparation, structure and infrared transmission of sputtered α-C films and sputtered α-C: H films. The main research works and results are as follows:Anti-reflection film systems containing DLC are designed on Si substrates and ZnS substrates, and deviation of the film system’s structure is analyzed. The designed results show that the film systems own good transmission on Si and ZnS substrate.Sputtered α-C films and sputtered α-C: H films have been prepared using RF magnetron sputtering apparatus on Si (111) substrates in order to research the influences of the main experiment parameters such as RF power, gas flow, vacuum gas pressure and substrate temperature on the film deposition rate respectively. The investigations show that the deposition rate increases with the increasing of sputtering power, and initially increases and then decreases with the increasing of sputtering pressure, but is insensitive to the substrate temperature in the preparation of the sputtered α-C films. The investigation shows that the deposition rate increases with the increasing of sputtering power, CH4 gas flow and vacuum gas pressure, but initially increases and then decreases with the increasing of substrate temperature in the preparation of the sputtered α-C: H films.AFM analyses show that the RMS rough increases with the increasing of sputtering power. The surface of the sputtered α-C: H film is smoother than the sputtered α-C film. Raman analyses show that sputtered α-C films and sputtered α-C: H films both contain sp~3 and sp~2 bonds. XRD results show that deposited DLC films are amorphous.FTIR transmission spectrum results confirm the average transmittance at a wavelength of 3～5μm of Si coated with one layer of sputtered α-C: H films on two更多还原