【作者】 苗银萍；

【导师】 孙汪典；

【作者基本信息】 暨南大学 ， 凝聚态物理， 2006， 硕士

【摘要】 ZnS是一种重要的Ⅱ—Ⅵ族直接带隙半导体材料，室温下其禁带宽度为3.6eV，激子束缚能为40meV，在蓝紫光发光二极管和激光二极管等光电器件方面具有广阔的应用前景。通过引入Mg替代ZnS中的Zn所形成的固溶化合物ZnMgS，可以实现对发光波长、晶格常数和禁带宽度等不同变化的要求，这些特性对于半导体光电器件的设计和制作十分关键。因此对固溶体ZnMgS材料的研究具有非常重要的意义。 本文利用真空蒸镀法在石英玻璃和ITO玻璃等基底上成功制备了一系列含有不同Mg成分的Zn_1-xMg_xS薄膜，借助于X射线能量色散谱（EDS）仪、原子力显微镜（AFM）、X射线衍射（XRD）仪、激光拉曼（Raman）光谱仪、紫外—可见（UV—Vis）分光光度计、光致发光（PL）光谱仪等测试手段对薄膜的成分、表面形貌、晶体结构以及光学性能等方面做了相关的测试，得出以下结论： 石英基底上，在所制备的成分范围（0≤x≤0.73）内，薄膜晶体生长形貌和结晶性良好，为闪锌矿结构；拉曼光谱的特征谱峰比较明显；薄膜在波长为356～275nm处形成陡峭的吸收边，在波长小于275nm的紫外区有强烈的吸收，得出薄膜的禁带宽度可以在3.6eV到4.1eV之间调节，结合维戈定律推出带隙的表达式：E_g（x）=0.6869x²+0.2131x+3.6；光致发光谱中发光中心波长在可见光区蓝紫光范围约为420～395nm之间。随着Mg含量的增加，样品的X射线衍射（111）峰位向大角度方向移动；拉曼谱特征峰向高波数移动；吸收边和发光峰的蓝移也增加。蓝移说明了带隙的展宽，薄膜带隙可调并且保持了单晶的优良特性有利于作为短波光电器件和拓展紫外发光器件材料。 在ITO玻璃基底上沉积的ZnMgS薄膜初步呈现了良好的结晶性能和发光等光学性能。说明了关于ITO玻璃为基底的高质量的ZnMgS薄膜的研究对场发射平板显示器的实现有重要意义，也具有制作光致发光和电致发光器件良好的应用前景。更多还原

【Abstract】 ZnS is a kind of important II-VI direct band-gap semiconductor materials（3.6eV at room temperature）.it has comparatively large exciton binding energy of 40meV. ZnS is a kind of very promising materials for making the optoelectronics devices such as UV/blue light-emitting diodes and short-wavelength semiconductor diode laser devices being developed and put in application. The solid-solution ZnMgS can be formed by introducing Mg into ZnS and filling in it. It can have different luminescence wavelength, crystal lattice parameter and band gap. These characteristic are key to designing and making semiconductor optoelectronics devices. So it is all-important to research solid-solution semiconductor ZnMgS materials.Solid solution polycrystalline Zn_1-xMg_xS thin films were grown successfully on amorphous quartz glass and ITO glass substrates by vacuum evaporation and it has different content of Mg. The compositions, structures, morphologies and optical characterizations of the thin films were investigated by EDS, XRD, Raman, AFM, UV-visible absorption spectra and PL spectra and the results indicate that Zn_1-xMg_xS thin films have uniformly morphology and show a （111） oriented zinc-blend structure. The films have very strong absorption in the short wavelength range and the absorption edge is about between 356 and 275nm.And deducting the expression of band-gap: E_g（x） =0.6869x²+0.2131x+3.6. PL peaks locate between 420 nm and 395nm without other emission at room temperature. With increasing of Mg component, （111） peaks move a little to large angle, the absorption edge and PL peak are found blue shift obviously, which indicate band-gap becomes wide and it increases from 3.60ev to 4.1ev. According to these characterizations, it is concluded that Zn_1-xMg_xS thin films are promising materials for short wavelength optoelectronic applications and ultraviolet detectors. The structures, morphologies, optical and electrical characterizations of the films prepared on ITO glass by investigating are all right. It shows important sense and considerable application foreground to carrying out field emission-flat display and photoluminescence and electroluminescence devices at the same time.更多还原