【作者】 王静；

【导师】 何捷；

【作者基本信息】 四川大学 ， 核技术及应用， 2006， 硕士

【摘要】 作为过渡金属元素，钒可以和氧以V_xO_y形式结合成多种氧化物。各种氧化钒薄膜以其优良的性能成为国内外功能材料研究的热点，具有广阔的应用前景。但由于钒的多价态，制备具有纯净化学计量比的氧化钒非常困难。本文利用真空蒸发—真空还原方法以高纯V₂O₅粉末为原料制备出纯度较高、结晶度好的几种主要的氧化钒薄膜（V₂O₅、VO₂（B）、VO₂（A）、V₂O₃），通过控制各个工艺参数（薄膜衬底材料、薄膜厚度、真空度、衬底温度、蒸发电流、蒸发时间、退火时间、退火温度等）来探索最佳制备条件，并运用各种测试方法对薄膜性能进行分析，研究各工艺参数对氧化钒薄膜晶体结构、表面形貌、V离子价态及电学性质等方面的影响。经过多次实验取得了一定成果。本论文的研究工作如下： 1．研究了衬底温度和衬底材料对薄膜晶体结构和电阻温度系数的影响。发现衬底温度对退火后薄膜的晶粒生长影响不大。而单晶衬底利于氧化钒薄膜生长，且制备的薄膜较非晶衬底具有较高的电阻—温度系数。 2．研究了退火温度对氧化钒薄膜制备的影响。发现随退火温度升高，薄膜先后经历了单斜晶系VO₂（B）型→单斜晶系VO₂（A）型→四方晶系VO₂→V₂O₃的变化，并对VO₂薄膜进行深入研究。研究发现，三种VO₂薄膜中V均以V⁴⁺为主，且VO₂（A）型薄膜中V⁴⁺含量最高。薄膜电阻以退火温度460℃时为分界，低于460℃时，VO₂（B）型薄膜电阻和电阻温度系数随退火温度升高而增大，高于460℃时，四方晶系VO₂薄膜电阻及其电阻温度系数随退火温度升高呈现相反的趋势。在460℃时，薄膜的电阻温度系数最大，能达到3.2％／℃．经查新说明，使用这种工艺方法和条件制备各种氧化钒薄膜是本工作的创新。更多还原

【Abstract】 Vanadium as a transition element can compose varial Vanadium oxides by V_xO_y with oxygen and Vanadium oxides have been widely studied because of their excellent characters. But Vanadium has so many valence that Vanadium Oxides with strict metric are not available. In this paper, good crystal thermal-sensitive Vanadium oxides （V₂O₅, VO₂（B）, VO₂（A）, V₂O₃） thin films are prepared from V₂O₅ powder by vacuum evaporation and vacuum annealing. We selected the best qualifications by experimenting with various fabricative parameters such as underlay material and temeprature, thin film thickness, vacuum degree, evaporation current, evaporation time, anealing hour, anealing temperature. The structural properties, surface morphology, electrical properties, and V ion valence state of VOx thin films were measured by tesing and analysed and some instructive results were got. The contents of the work are listed as following:1. The effects on the crystal structure and the temperature coefficient of Vanadium oxide thin films were studied because of different underlay temperatures and materials. Rusults were found underlay temperature did not influence obviously the crystals’ sizes of the thin films, but Vanadium oxide thin films on single-crystal underlay had better crystal structure and temperature coefficient of更多还原