【作者】 魏东；

【导师】 钟景昌；

【作者基本信息】 长春理工大学 ， 凝聚态物理， 2006， 硕士

【摘要】 垂直腔面发射激光器(Vertical Cavity Surface Emitting Lasers，简称VCSEL)是一种新型的半导体激光器，和普通激光器相比，它的阈值电流低、效率高、功耗低、发散角小、容易和光纤耦合以及易于和其他光学元件集成等优异特性，在光信息处理、光互连、光计算等方面都有广泛的应用前景。本论文设计和制作了850nm垂直腔面发射激光器，主要内容如下： 阐述了垂直腔面发射激光器的工作原理，结构设计，并重点对850nm高功率垂直腔面发射激光器分布布拉格反射镜(DBR)进行了理论设计及分析。 设计出AlAs／【GaAs／AlAs】半导体／超晶格DBR，并使用MBE设备在n~+-GaAs(100)衬底上外延生长了这种DBR反射镜。结果表明，此DBR在保持较高的反射率的同时也具有较小的串联电阻。 在VCSEL器件研制方面，我们采用氧化物限制结构来对其电流和光场进行限制。研制出的VCSEL室温激射波长峰值在840nm、单管阈值电流不大于5mA、单管峰值输出功率不小于3.5mW。更多还原

【Abstract】 Vertical-cavity surface-emitting lasers(VCSEL) have distinct advantages over conventional edge emitting lasers, such as small divergence angle, single longitudinal mode operation ,very low threshold current, compatible with optical fiber and other optical elements. They have become the ideal light sources for optical interconnections, optical free space communications, optical signal processing and neural networks. In this paper, we give some results on the design and fabrication of 850nm VCSELs, the main work is as follows:First we simply described the theory of VCSEL, and gave special analysis on 850nm high power VCSEL DBR design.A novel semiconductor/superlattice DBR has also been designed. In the experiment, the p-type and n-type DBR with different pairs and at different wavelengths have been grown on an n~+-GaAs(100) substrate with MBE system. From the result, the DBR has low series resistance while retaining high reflectivity.For the VCSEL fabrication, oxide-confined structure provides electrical and optical confinement. The laser wavelength peak is about 840nm. The lowest threshold current of 5mA is achieved. The minimum output power is over 3.5mW.更多还原