SiGe HFIC宽带低噪声放大器的研究

【作者】 张华斌；

【导师】 张庆中；

【作者基本信息】 电子科技大学 ， 微电子学与固体电子学， 2006， 硕士

【摘要】 低噪声放大器(LNA)广泛应用于通讯、电子对抗等系统的接收装置的前端,其性能的好坏对整个接收装置有重要的影响。对微波高频宽带低噪声放大器的要求是:低功耗、低成本、宽带、高线性度和低噪声。论文应用多种技术和方法设计了一个MMIC微波单片集成的宽带低噪声放大器。这些技术和方法包括:1、为解决低噪声及低成本的问题,设计中采用SiGe异质结器件来取代通用的Si器件,同时也放弃使用GaAs器件。这是由于SiGe器件不仅具有类似GaAs器件的高性能,而且具有Si器件的低成本。在工艺上,SiGe器件可以采用BiCMOS技术,很好地实现了与CMOS技术的兼容。2、采用电路可关断技术,导通状态时器件处于工作状态;非导通状态时器件处于截止状态。采用器件旁路小电流工作电路,实现对低噪声放大器主要工作晶体管的控制,使该晶体管按需要分别处于工作或关断状态,保证了放大器的极低功耗。3、使用反馈技术,不仅可以获得平坦的增益和降低输入输出的驻波比VSWR,而且也可以使用较少的元器件。也可以用平衡技术来设计宽带放大器,但使用的元件较多,成本较高,所以在设计中没有采用平衡技术。4、利用寄生参数来设计电路。由于电路的封装存在寄生电感,其不仅会影响电路的特性,而且可能造成电路设计工作的失败,所以根据电路所需电感及其值的大小,将之有效的设计在放大器电路中。5、采用内匹配网络技术,设置输入输出匹配网络,以保持增益和传输特性的平坦性,提高输出功率和效率,降低反射系数,减少损耗。论文提出了具有开关功能的低功耗SiGe双极器件的新型放大器和利用寄生电感来设计电路的新思路,同时在工艺上采用SiGe HIT-KIT 0.35μm BiCMOS工艺来制作平面电感和有源器件,成功完成了0.5-6GHz微波宽带低噪声放大器的前期仿真和设计工作。以论文的结果为基础,可望在后续工作中完成该低噪声放大器的实用化,最终实现市场推广价值。更多还原

【Abstract】 Low noise amplifier is widely used in front-end of a transceiver in mobile communication, electronic counterwork and other fields, whose performance makes significant effect on the wireless transceiver. Design methodology is discussed on the aspects of lower power, lower cost,wide band, good linearity and lower noise. The relative technology is as follows:1. To solve the lower noise and cost problem, SiGe device, instead of Si and GaAs device, is used in the WLNA. SiGe device not only holds the high performances as GaAs device, but also has the lower cost as Si device. In addition, the BiCMOS process of SiGe device is compatible with CMOS process of Si device.2. To reduce power dissipation of the amplifier, a kind of on/off technology is used in the circuit. With a little bias current circuit to control the main bipolar transistor operation, the transistor will be in a state of ON/OFF.3. To keep smooth gain, good VSWR, and fewer devices, a feed-back technology is adopted. Balance technology to design WLNA is done by other authors, however, which is very expensive. So it will not be introduced in this dissertation.4. To make use of parasitic parameter to design the circuit: because parasitic inductance induced by packaging could not only influence the circuit characteristics, but also lead to a design failure, the inductor value needed in the circuit can be designed in the amplifier according to the size of parasitic inductance.5. In order to keep gain smooth, enhance output power and efficiency, and reduce reflect factor and attenuation, inner matching networks are needed. With the kind of design of 0.5-6GHz WLNA, a new type of amplifier with ON/OFF function, based on SiGe device, is presented, which is improved by adopting parasitic parameter with SiGe HIT-KIT 0.35μm BiCMOS process. At present simulation is finished successfully, and the amplifier is coming to be commercialized.更多还原