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射频磁控反应溅射法制备Y2O3薄膜的研究

Study on Y2O3 Thin Film by RF Magnetron Reactive Sputtering

【作者】 闫锋

【导师】 刘正堂;

【作者基本信息】 西北工业大学 , 材料学, 2006, 硕士

【摘要】 金刚石具有优异的力学、电学、热学和光学性能,是用于长波红外波段(8~12μm)理想的窗口和头罩材料。然而,当温度超过750℃时金刚石很容易发生氧化,导致透过率急剧下降。为了满足在高速、高温下应用的要求,需要在金刚石表面制备抗氧化、增透保护涂层。三氧化二钇(Y2O3)具有优良的物理、化学性能,抗高温氧化能力强,可用作金刚石抗氧化保护涂层。在国外,Y2O3用作金刚石抗氧化涂层的研究已经展开,并取得进展;在国内,有关Y2O3光学保护涂层的研究还未见报道。本文主要研究制备Y2O3薄膜的制备工艺和薄膜的成分、结构及红外透过性能,为金刚石应用于高速红外窗口和头罩提供工艺技术基础。论文的主要工作及研究成果如下: 利用OPFCAD软件在金刚石衬底上设计了Y2O3增透膜系,并对所设计的膜系进行了结构敏感因子及结构偏差分析。膜系设计结果表明,在金刚石衬底上镀Y2O3或Y2O3/AlN膜系后在8-12μm波段的红外透过率可达90%,最大增透效果可达21%。 在JGP560C型磁控溅射镀膜机上优化出了制备Y2O3薄膜的工艺参数,揭示了射频功率、溅射气压、衬底温度和Ar/O2气体流量比对薄膜沉积速率的影响规律。正交试验设计结果表明,溅射气压和射频功率是影响Y2O3薄膜沉积速率的主要因素,并由此确定了获得薄膜最大沉积速率的工艺参数。 对制备的Y2O3薄膜进行了X射线光电子谱(XPS)、X射线衍射(XRD)和FTIR红外透过光谱分析。XPS分析结果表明,沉积态薄膜中Y和O原子结合形成了Y2O3化合物;XRD分析结果表明,沉积态薄膜中Y2O3主要以非晶状态存在,在800℃下退火后Y2O3薄膜向多晶转变;红外透过光谱分析结果表明,Si衬底上镀Y2O3膜后,在2000~3000cm-1波数范围的平均透过率可达90%以上,Y2O3薄膜的折射率约为1.93。

【Abstract】 Diamond is an ideal material for airborne LWIR (812μm) windows and domes with excellent properties in mechanics, electrics, calorifics and optics. However, diamond is easily subject to oxidation in air at temperatures higher than 750℃, and the optical transmittance is hence degraded greatly. In order to meet the requirements of the applications under high-speed or high-temperature, anti-oxidation and anti-reflective films must be prepared on the diamond surface. Yttrium oxide (Y2O3) is a promising anti-oxidation material for diamond with good physical, chemical and anti-oxidation properties. Great progresses have been made in the researches on Y2O3 anti-oxidation films overseas. But no domestic work has yet been done. Researches of this paper concentrate mostly on the preparations, components, structures and infrared transmission properties of Y2O3 films, which will establish a technical foundation for using diamond for high-speed IR windows and domes. The main research works and results are as follows:Anti-reflective films containing Y2O3 are designed on diamond substrates with OPFCAD software and the sensitive factor and deviation of the films’ structure are analyzed. The designed results show that the average transmittances of both Y2O3//Diamond and Y2O3/AIN//Diamond systems over 811.5μm waveband exceed 90%, and the maximal increased transmittance is up to 21%.Y2O3 films are prepared on silicon substrates through JGP560C magnetron sputtering apparatus in order to research the influences of the main depositing parameters, such as the RF power, gas pressure, Ar/O2 gas flow ratio, and substrate temperature, on the film depositing rates, and thus the optimized parameters are obtained. The orthogonal experiment results show that the effects of RF power and gas pressure on the deposition rates is most significant, and the parameters to get high deposition rate are decided.XPS and XRD analyses as well as FTIR transmission spectrum tests are carried out. XPS analysis confirms the formation of the compound of Y2O3 XRD results show that the as-deposited Y2O3 films are mainly amorphous and after annealed at 800 °C become polycrystalline. FTIR results show that the average transmittance over 2000-3 000cm"1 of silicon substrate with Y2O3 films coated on both sides exceeds 90%, and the refractive indexes of the film are about 1.93.

  • 【分类号】TB383.2
  • 【被引频次】3
  • 【下载频次】298
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