【作者】 王志宇；

【导师】 郭宝增；

【作者基本信息】 河北大学 ， 微电子学与固体电子学， 2005， 硕士

【摘要】 本文报告了采用全带多粒子Monte Carlo 方法模拟纤锌矿相GaN 体材料空穴输运特性的研究结果。首先介绍了纤锌矿相GaN 材料的结构特性和全带多粒子Monte Carlo 方法的原理,并将全带方法和常规分析带方法进行了比较。模拟的主要步骤包括定义物理系统、计算散射率、确定空穴运动的初始条件、确定自由飞行时间、选择散射机理、散射最终态的选择以及结果的处理, 其中引入了自散射以简化自由飞行时间的计算。模拟中包含的散射机理主要有声学声子散射、极性光学声子散射、电离杂质散射等。在散射率的计算中将空穴能量分成低能区和高能区,在低能区这些散射的散射率根据费米黄金规则计算得出;在高能区的散射率采用态密度标度化来实现。模拟所需的能带结构数据由经验赝势法得出。最后,列出了模拟程序的流程图。给出了平均能量、平均漂移速度与电场强度关系曲线等模拟结果,并对结果进行了分析。更多还原

【Abstract】 In this paper, we study the hole transport properties of bulk wurtzite phase GaN by the full band ensemble Monte Carlo method. At first, we introduces the structure and characteristics of wurtzite phase GaN and the full band ensemble Monte Carlo method, and compares the full band Monte Carlo method with the general analytic band Monte Carlo method.The main steps include the definition of the physical system,the calculation of scattering rates,initial conditions of motion,calculation of free flight time,choice of the scattering mechanism, choice of the final state and treating result. Self-scattering method is used to simplify the calculation of free flight time. In our simulation model,the scattering mechanisms include acoustic phonon scattering, polar optical phonon scattering,and ionized impurity scattering and so on. The energy range of the holes is divided into two parts for the purpose of calculating the scattering rates. At low energy region,scattering rates are calculated using Fermi′s golden rule.At higher energy region,scattering rates are normalized by the final density of states.The band structure data is calculated using the empirical pseudopotential method. At final, flow chart of program is shown. The simulation results include average energy and average velocity as a function of electric field and so on.Analysis of the simulation results are also given.更多还原