高功率980nm垂直腔面发射激光列阵

【作者】 金珍花；

【导师】 王立军； 宁永强；

【作者基本信息】 中国科学院研究生院（长春光学精密机械与物理研究所） ， 光学， 2005， 硕士

【摘要】 垂直腔面发射激光器(Vertical Cavity Surface Emitting Lasers,简称VCSEL)以其优异的性能有望成为信息时代的新光源。本论文设计和制作了980nm 垂直腔面发射激光器列阵,主要内容如下: 从多量子阱的速率方程出发得出了阈值电流的表达式;计算了注入电流与输出功率的关系;由垂直腔底发射激光器的电流传播模型得出了热源分布。分析了腔镜反射率、量子阱数等参数对阈值电流、输出光功率的影响,并根据理论计算对器件参数进行了优化设计。对垂直腔面发射激光器的湿法腐蚀技术、选择氧化工艺、合金工艺等关键工艺进行了研究,得到了最佳工艺条件。采用氧化物限制方法制作的垂直腔底发射激光器,有源区直径为500μm、600μm 的单管在室温下均获得了最高连续光输出功率1.95W,是目前国际上所实现的单管室温连续输出最高功率值。研究了热阻、发射波长、光谱半高宽、光输出功率随有源区直径和注入电流的关系。研究了直径200μm 的器件的近场和远场分布,结果表明底发射器件电流分布均匀,阈值时光强分布为高斯型,为基模输出。研制出980nm 垂直腔面发射激光列阵,测试了输出功率和光谱,并与相同出光面积的单管器件进行了比较。更多还原

【Abstract】 Vertical-cavity surface-emitting lasers have the potential to become the new light source in information age for their excellent performance.In this thesis,we give some results on the design and fabrication of 980nm VCSELs array,the main work is as follows: Based on the rate equations for multi-quantum wells of vertical cavity surface emitting laser (VCSELs), the relation of threshold current and output power was simulated. Thermal distributing of device was also deduced from current transport model. The effects of DBR reflectivity and well numbers on threshold current and output power of bottom-emitting VCSELs were analyzed to design an optimal device structure. We have explored technologies for the fabrication of VCSELs, such as wet etching,wet and selective oxidation and annealing. By using wet etching and selective oxidation process,we fabricated 980nm high power VCSELs. The continuous-wave (CW) output power as high as 1.95W with active diameters up to 500μm and 600μm have been achieved, which, to our knowledge, is the highest value reported for a single device. The dependence of thermal resistance, emitting wavelength, FWHM, and output power on active diameters and injection current was studied. The near-field and far-field pattern of light intensity of a 200μm diameter device exhibits a homogeneous current distribution and a single transverse mode operation. 980nm VCSEL array was fabricated and the comparison of output power and spectrum of array device with single device of same active area was analyzed.更多还原