【作者】 肖海波；

【导师】 邹世昌； 张峰；

【作者基本信息】 中国科学院研究生院（上海微系统与信息技术研究所） ， 微电子与固体电子学， 2004， 硕士

【摘要】 随着全光网络和光子集成技术的发展，掺铒光波导放大器（EDWA：Er Doped Waveguide Amplifier）作为较新的研究领域，正在受到越来越多科研工作者的重视。本论文采用离子束辅助沉积和离子注入法开展了掺Er：Al₂O₃薄膜和掺Er：nc-Si／SiO₂材料的研究。 实验采用离子束辅助沉积和离子注入法制备了掺铒Al₂O₃薄膜，研究了不同退火温度下，样品的成分、结构、表面形貌和化学价态。随退火温度的升高，Er离子被激活，样品的光致发光强度随退火温度升高而上升。样品在700℃退火下，折射率和粗糙度都达到最小值，影响了透射谱中此样品的透射峰强度和光吸收损耗，并影响了光致发光谱。论文对材料发光机理进行了一些探讨。有关微观结构的具体变化，及对材料光致发光机理的影响需要系统的研究。实验还采用Xe离子轰击的方法制备了非晶的Al₂O₃薄膜，研究了轰击对样品表面形貌的影响。 论文还利用离子注入方法制备了纳米颗粒直径为2～4nm的nc-Si／SiO₂材料，制备的Si纳米晶颗粒周围分布着大量的非晶硅。随退火温度升高，非晶硅层减少，晶化加强。 论文制备了掺铒nc-Si／SiO₂材料。研究了材料的微观结构，并测量了样品的光致发光谱，研究了材料的微观结构和掺Er后材料发光强度随测量温度的变化。实验对材料的发光机理进行了深入的探讨，发现存在于非晶氧化硅及其界面上的光激活Er离子，通过非晶硅与纳米硅相耦合，非晶硅的存在影响了纳米硅与Er离子间的能量传递，对Polman等人的纳米硅与Er的强耦合模型提出了改进。 最后，论文初步开展了联合沉积法制备掺Er薄膜材料的工作。更多还原

【Abstract】 With the development of optical communication and integrated optoelectronics, Er Doped Waveguide Amplifier (EDWA) has become the hotspot in the field of optical fiber communication and optoelectronics. We prepared Er-doped Al2O3 Films and Er-doped nc-SiO2 Films, and studied their characterization.Er-doped Al2O3 Films were prepared by Ion Beam Enhanced Deposition (IBED) and Ion Implantation. After different annealing temperature, we examined the composition, surface morphology, structure and chemical value. Er3+ ions were activated gradually and photoluminescence intensity increased with the annealing temperature. Annealed at 700℃, refractive index and surface roughness reached the least, which affected optical transmission spectra, optical absorption loss, and photoluminescence intensity. This thesis discussed the PL mechanism.We also prepared Er-doped nc-SiO2 Films by Ion Implantation. After different annealing temperature, the microstructure and photoluminescence were investigated. We discussed the PL mechanism in-depth, and made conclusions that Er ions lied in amorphous Si and coupled with nc-Si through a-Si, which affected the energy transfer from nc-Si to Er. We ameliorated Polman’s model.Finally, the paper developed the co-sputtering technology to prepare Er-doped films.更多还原