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低温毛细抽吸两相流体回路(CCPL)的结构设计和数值模拟

Configuration Design and Numerical Simulation of Cryogenic Capillary Pumped Loop (CCPL)

【作者】 杨贤飞

【导师】 宣益民; 李强;

【作者基本信息】 南京理工大学 , 热能工程, 2004, 硕士

【摘要】 本文分析了低温毛细抽吸两相流体回路(CCPL)系统及各部件设计方法,并对其核心部件蒸发器设计进行了详细的阐述,尤其突出了低温与常温毛细抽吸两相流体回路之间的主要不同结构---液体冷却罩(LCS)的设计方法,给出了系统传热极限的计算公式。根据给定设计条件,设计出一个典型的CCPL模型,为数值计算提供参考尺度。 利用热网络法建立了CCPL的数值模型,并以设计出的CCPL为基础,在系统启动、热负荷改变和冷储液器设点温度改变三种不同运行条件下,计算出系统的温度、压力和流量随时间变化曲线,得出比较满意的结果。 本文采用VB6.0编制程序界面,开发出CCPL的设计软件,采用3DS Max绘制系统3D模型,并利用粒子系统开发出CCPL的动画演示系统,直观地演示了CCPL中蒸汽的产生、流动以及汽液界面的变化过程。

【Abstract】 This paper describes the development of an advanced cryogenic integration device-the cryogenic capillary pumped loop (CCPL), a miniaturized two-phase fluid circulator for thermally linking cryogenic cooling sources to remote cryogenic components. A CCPL utilizes the latent heat of vaporization of a working fluid to transfer heat and the surface tension forces forms in fine-pore wicks to circulate the working fluid. Design procedure for different CCPL configurations and its heat transfer limitations are discussed. Especially the design procedure of liquid cooled shield (LCS) is introduced. Furthermore, a CCPL unit is designed; the unit utilizes nitrogen as the working fluid and operates between 80 and 90K.The CCPL numerical model is established by using the nodal or lumped parameter method. In the three different operation cases: start-up from a supercritical state, heat load increase and cold reservoir set point temperature change, the variation curves of temperature, pressure and mass flux varying with time are given. The results of simulations accord with the principles of CCPL and correctly reflect the dynamic characters of CCPL. It is concluded that the model is reasonable and the computed results are satisfying.In order to show the dynamic process of CCPL, this paper also designs the program interface of CCPL design software using VB6.0. The 3D model of CCPL is plotted using 3DS Max. Using particle system, the 3D demo animation system is developed; the generation and flow process of vapor in CCPL are displayed.

  • 【分类号】TK121
  • 【被引频次】4
  • 【下载频次】150
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