V波段低噪声放大器的研制

【作者】 陈春红；

【导师】 恽小华；

【作者基本信息】 南京理工大学 ， 电磁场与微波技术， 2004， 硕士

【摘要】 本文研究了应用于V波段星间链路的V波段低噪声放大器。在国内的工艺基础上，选取HEMT管芯，用微带电路进行匹配，采用微波混合集成电路(HMIC)技术实现低噪声放大器。 由于毫米波段寄生效应非常明显，选取频带宽、工艺加工一致性好的拓扑结构，尽量减小由尺寸的细微变化引起的性能偏差，并且充分考虑了放大器的稳定性。针对毫米波放大器易出现的自激现象，在电路结构中采取多种抑制的途径。采用等功率指示法测量放大器的噪声系数，从而提高了噪声系数测量的精度和准确性。 本文采用了先进的微波电路设计软件Ansoft对电路进行设计、优化和仿真，制成的放大器在59.4～60.6GHz的频段内噪声系数小于4.5dB、增益大于30dB、带内波动小于2.0dB，电压驻波比小于等于2，接口采用了WR-15标准波导法兰。国外设计V波段低噪声放大器一般采用MMIC技术，很少用HMIC来实现，并且增益比较低，而国内对V波段放大器的研究未见报道。更多还原

【Abstract】 This thesis presents the study of a V-band Low Noise Amplifier (LNA) witch is used in the project named "Millimeter wave ISL technology". Basing on internal technology level, the HMIC amplifier was composed of HEMT devices and microstrip.Because the parasitical phenomenon is serious in millimeter-wave band, the wide-band topology with good process coincidence was adopted to suppress the deterioration of performance caused by size error. And the stability was considered carefully. Several methods were taken to avoid the self-excitation which is frequent in millimeter-wave band. The technique of equal power indication was adopted to measure this amplifier accurately.Ansoft was used to design, optimize and simulate the circuits. The amplifier was developed with the Noise figure of 4.5dBmax and the gain of 30dBmin over the 59.4~60.6GHz range. Its other major features include the ripple in band. 1.0dB, the VSWR. 2 and the ports of standard waveguide WR-15.更多还原