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TiO2与SnO2:F纳米薄膜的制备与特性研究

Preparation and Properties of F-doped SnO2 and TiO2 Thin Film

【作者】 张馨

【导师】 高锦岳; 周大凡;

【作者基本信息】 吉林大学 , 光学, 2004, 硕士

【摘要】 本论文分别全面论述了两种纳米薄膜TiO2 和SnO2:F 的原理、应用及其制备方法,并通过一系列的检测得出以下结论:我们实验所制备的TiO2纳米薄膜有良好的自洁净效应,SnO2:F 纳米薄膜有优秀的节能效果。用溶胶-凝胶提拉法制备TiO2 纳米薄膜,将其镀在玻璃基底上,采用紫外光辐射降解甲基橙溶液,并用分光光度计测定自洁净玻璃对有机物的降解率(即光催化活性)为36.6%/h;利用紫外可见光分光光度计扫描测量其透过率光谱曲线,其平均透过率>70%;用接触角测量仪测量其样品表面的亲水性,接触角为5?,亲水性表面,停止光照后恢复疏水性,继续光照仍能变为亲水性。不仅制备出了高质量的自洁净纳米薄膜玻璃,而且上述测定方法已成功的应用于自洁净玻璃的研制与工业生产过程中的质量检测。采用超声雾化喷涂热解法,在预镀了二氧化硅的钠钙玻璃上沉积了透明的、具有低薄膜电阻的掺氟二氧化锡薄膜。此膜可用于低辐射、导电薄膜。将O H SnCl 2 4 5 . 和NH4F 溶于50%C2H5OH/50%H2O 的混合溶剂中,作为起始溶液使用,因为这种配比既不易燃没有危险性又符合实验对溶剂挥发性的要求。溶液中掺杂F/Sn 为1:4,这时制成的薄膜电阻最小。在掺<WP=81>杂量小的时候,薄膜电阻随着掺杂量的增加而减小;在掺杂量达到一定值以后,薄膜电阻随着掺杂量的增加而增大。采用以下最佳工艺条件:基板温度为450℃,喷嘴至基板距离为60mm,载带气体流速为8 立升/分,沉积时间为5 分钟,可制备出面电阻仅为2 sq / . ,热辐射反射率为97.9%的高质量SnO2:F 纳米薄膜。

【Abstract】 In this paper I discussed the theory application and preparation of thetwo kinds of nanometer thin film, TiO2 and F-doped SnO2 nanometer thin film.And I concluded by a series of measuring methods that the TiO2 coating glasswe prepared in my lab has good property of self-cleaning; the SnO2:F lowemission coating glass has high top-quality energy saving character.We prepared TiO2 nanometer thin film by the method of Sol-Gel, and wedeposited it on a glass surface. We use the photo catalytic degradation ofmethyl orange solution spectrophotometric method to measure thedegradation rate of organic matter, and the degradation rate is 36.6%/h; aUV-Vis spectrophotometric scanning procedure to measure the transmittanceand it’s visible transmissivity is more than 70% A hydrophility measuringmethod by using a contact angle meter measured the contact meter is about 5o,so it is hydrophility. Without the ultraviolet radiation, the contact angle willcome back to become bigger, and then we continued to use ultraviolet<WP=83>radiation on it, it became hydrophility again. The above-mentioned methodshave been used in research works and production process of self-cleaningglass.Transparent low-resistance SnO2: F films, suitable as a low-emissivityand conducting coating, have been deposited on silica-coated soda lime glassby pyrosol. SnCl4 ?5H2O and NH4F (F/Sn=1:4) dissolved in50%C2H5OH/50%H2O solvent served as the starting solution. With theparameters such as substrate temperature of 450 , distance between nozzleand substrate of 60mm, carrier gas flow rate of 8L/MIN and deposition time of5 min, the optimized SnO2: F films having a sheet resistance of about 2 ?/ sqwith infrared reflection about 97.9%, were deposited repeatedly.

  • 【网络出版投稿人】 吉林大学
  • 【网络出版年期】2004年 04期
  • 【分类号】O484
  • 【被引频次】1
  • 【下载频次】398
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